Title: Quantitative analysis of charge transport in intrinsic and doped organic semiconductors combining steady-state and frequency-domain data
Authors : Jenatsch, S.
Altazin, S.
Will, P.-A.
Neukom, M. T.
Knapp, E.
Züfle, S.
Lenk, S.
Reineke, S.
Ruhstaller, B.
Published in : Journal of applied physics
Volume(Issue) : 124
Issue : 105501
Publisher / Ed. Institution : American Institute of Physics
Issue Date: 2018
License (according to publishing contract) : Licence according to publishing contract
Type of review: Peer review (Publication)
Language : English
Subject (DDC) : 530: Physics
Abstract: Single-carrier devices are an excellent model system to study charge injection and charge transport properties of (doped) transport layers and to draw conclusions about organic electronics devices in which they are used. By combining steady-state and impedance measurements at varying temperatures of hole-only devices with different intrinsic layer thicknesses, we are able to determine all relevant material parameters, such as the charge mobility and the injection barrier. Furthermore, the correlation and sensitivity analyses reveal that the proposed approach to study these devices is especially well suited to extract the effective doping density, a parameter which cannot be easily determined otherwise. The effective doping density is crucial in organic light-emitting diodes (OLEDs) for realizing efficient injection, charge balance, and lateral conductivity in display or lighting applications. With the fitted drift-diffusion device model, we are further able to explain the extraordinary two-plateau capacitance–frequency curve of these hole-only devices, which originates from charges that flow into the intrinsic layer at zero applied offset voltage. We demonstrate that the observation of this behaviour is a direct indication for ideal charge injection properties and the observed capacitance–frequency feature is linked to the charge carrier mobility in the intrinsic layer. The extracted material parameters may directly be used to simulate and optimize full OLED devices employing the investigated hole-injection and -transport materials.
Departement: School of Engineering
Organisational Unit: Institute of Computational Physics (ICP)
Publication type: Article in scientific Journal
DOI : 10.1063/1.5044494
ISSN: 0021-8979
1089-7550
URI: https://digitalcollection.zhaw.ch/handle/11475/15767
Appears in Collections:Publikationen School of Engineering

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