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dc.contributor.authorJenatsch, Sandra-
dc.contributor.authorAltazin, Stéphane-
dc.contributor.authorWill, Paul Anton-
dc.contributor.authorNeukom, Martin T.-
dc.contributor.authorKnapp, Evelyne-
dc.contributor.authorZüfle, Simon-
dc.contributor.authorLenk, Simone-
dc.contributor.authorReineke, Sebastian-
dc.contributor.authorRuhstaller, Beat-
dc.date.accessioned2019-03-04T10:16:50Z-
dc.date.available2019-03-04T10:16:50Z-
dc.date.issued2018-
dc.identifier.issn0021-8979de_CH
dc.identifier.issn1089-7550de_CH
dc.identifier.urihttps://digitalcollection.zhaw.ch/handle/11475/15767-
dc.description.abstractSingle-carrier devices are an excellent model system to study charge injection and charge transport properties of (doped) transport layers and to draw conclusions about organic electronics devices in which they are used. By combining steady-state and impedance measurements at varying temperatures of hole-only devices with different intrinsic layer thicknesses, we are able to determine all relevant material parameters, such as the charge mobility and the injection barrier. Furthermore, the correlation and sensitivity analyses reveal that the proposed approach to study these devices is especially well suited to extract the effective doping density, a parameter which cannot be easily determined otherwise. The effective doping density is crucial in organic light-emitting diodes (OLEDs) for realizing efficient injection, charge balance, and lateral conductivity in display or lighting applications. With the fitted drift-diffusion device model, we are further able to explain the extraordinary two-plateau capacitance-frequency curve of these hole-only devices, which originates from charges that flow into the intrinsic layer at zero applied offset voltage. We demonstrate that the observation of this behaviour is a direct indication for ideal charge injection properties and the observed capacitance-frequency feature is linked to the charge carrier mobility in the intrinsic layer. The extracted material parameters may directly be used to simulate and optimize full OLED devices employing the investigated hole-injection and -transport materials.de_CH
dc.language.isoende_CH
dc.publisherAmerican Institute of Physicsde_CH
dc.relation.ispartofJournal of Applied Physicsde_CH
dc.rightsLicence according to publishing contractde_CH
dc.subject.ddc530: Physikde_CH
dc.titleQuantitative analysis of charge transport in intrinsic and doped organic semiconductors combining steady-state and frequency-domain datade_CH
dc.typeBeitrag in wissenschaftlicher Zeitschriftde_CH
dcterms.typeTextde_CH
zhaw.departementSchool of Engineeringde_CH
zhaw.organisationalunitInstitute of Computational Physics (ICP)de_CH
dc.identifier.doi10.1063/1.5044494de_CH
zhaw.funding.euNode_CH
zhaw.issue105501de_CH
zhaw.originated.zhawYesde_CH
zhaw.publication.statuspublishedVersionde_CH
zhaw.volume124de_CH
zhaw.publication.reviewPeer review (Publikation)de_CH
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Jenatsch, S., Altazin, S., Will, P. A., Neukom, M. T., Knapp, E., Züfle, S., Lenk, S., Reineke, S., & Ruhstaller, B. (2018). Quantitative analysis of charge transport in intrinsic and doped organic semiconductors combining steady-state and frequency-domain data. Journal of Applied Physics, 124(105501). https://doi.org/10.1063/1.5044494
Jenatsch, S. et al. (2018) ‘Quantitative analysis of charge transport in intrinsic and doped organic semiconductors combining steady-state and frequency-domain data’, Journal of Applied Physics, 124(105501). Available at: https://doi.org/10.1063/1.5044494.
S. Jenatsch et al., “Quantitative analysis of charge transport in intrinsic and doped organic semiconductors combining steady-state and frequency-domain data,” Journal of Applied Physics, vol. 124, no. 105501, 2018, doi: 10.1063/1.5044494.
JENATSCH, Sandra, Stéphane ALTAZIN, Paul Anton WILL, Martin T. NEUKOM, Evelyne KNAPP, Simon ZÜFLE, Simone LENK, Sebastian REINEKE und Beat RUHSTALLER, 2018. Quantitative analysis of charge transport in intrinsic and doped organic semiconductors combining steady-state and frequency-domain data. Journal of Applied Physics. 2018. Bd. 124, Nr. 105501. DOI 10.1063/1.5044494
Jenatsch, Sandra, Stéphane Altazin, Paul Anton Will, Martin T. Neukom, Evelyne Knapp, Simon Züfle, Simone Lenk, Sebastian Reineke, and Beat Ruhstaller. 2018. “Quantitative Analysis of Charge Transport in Intrinsic and Doped Organic Semiconductors Combining Steady-State and Frequency-Domain Data.” Journal of Applied Physics 124 (105501). https://doi.org/10.1063/1.5044494.
Jenatsch, Sandra, et al. “Quantitative Analysis of Charge Transport in Intrinsic and Doped Organic Semiconductors Combining Steady-State and Frequency-Domain Data.” Journal of Applied Physics, vol. 124, no. 105501, 2018, https://doi.org/10.1063/1.5044494.


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