| Publikationstyp: | Beitrag in wissenschaftlicher Zeitschrift |
| Art der Begutachtung: | Peer review (Publikation) |
| Titel: | Quantitative analysis of charge transport in intrinsic and doped organic semiconductors combining steady-state and frequency-domain data |
| Autor/-in: | Jenatsch, Sandra Altazin, Stéphane Will, Paul Anton Neukom, Martin T. Knapp, Evelyne Züfle, Simon Lenk, Simone Reineke, Sebastian Ruhstaller, Beat |
| DOI: | 10.1063/1.5044494 |
| Erschienen in: | Journal of Applied Physics |
| Band(Heft): | 124 |
| Heft: | 105501 |
| Erscheinungsdatum: | 2018 |
| Verlag / Hrsg. Institution: | American Institute of Physics |
| ISSN: | 0021-8979 1089-7550 |
| Sprache: | Englisch |
| Fachgebiet (DDC): | 530: Physik |
| Zusammenfassung: | Single-carrier devices are an excellent model system to study charge injection and charge transport properties of (doped) transport layers and to draw conclusions about organic electronics devices in which they are used. By combining steady-state and impedance measurements at varying temperatures of hole-only devices with different intrinsic layer thicknesses, we are able to determine all relevant material parameters, such as the charge mobility and the injection barrier. Furthermore, the correlation and sensitivity analyses reveal that the proposed approach to study these devices is especially well suited to extract the effective doping density, a parameter which cannot be easily determined otherwise. The effective doping density is crucial in organic light-emitting diodes (OLEDs) for realizing efficient injection, charge balance, and lateral conductivity in display or lighting applications. With the fitted drift-diffusion device model, we are further able to explain the extraordinary two-plateau capacitance-frequency curve of these hole-only devices, which originates from charges that flow into the intrinsic layer at zero applied offset voltage. We demonstrate that the observation of this behaviour is a direct indication for ideal charge injection properties and the observed capacitance-frequency feature is linked to the charge carrier mobility in the intrinsic layer. The extracted material parameters may directly be used to simulate and optimize full OLED devices employing the investigated hole-injection and -transport materials. |
| URI: | https://digitalcollection.zhaw.ch/handle/11475/15767 |
| Volltext Version: | Publizierte Version |
| Lizenz (gemäss Verlagsvertrag): | Lizenz gemäss Verlagsvertrag |
| Departement: | School of Engineering |
| Organisationseinheit: | Institute of Computational Physics (ICP) |
| Enthalten in den Sammlungen: | Publikationen School of Engineering |
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Jenatsch, S., Altazin, S., Will, P. A., Neukom, M. T., Knapp, E., Züfle, S., Lenk, S., Reineke, S., & Ruhstaller, B. (2018). Quantitative analysis of charge transport in intrinsic and doped organic semiconductors combining steady-state and frequency-domain data. Journal of Applied Physics, 124(105501). https://doi.org/10.1063/1.5044494
Jenatsch, S. et al. (2018) ‘Quantitative analysis of charge transport in intrinsic and doped organic semiconductors combining steady-state and frequency-domain data’, Journal of Applied Physics, 124(105501). Available at: https://doi.org/10.1063/1.5044494.
S. Jenatsch et al., “Quantitative analysis of charge transport in intrinsic and doped organic semiconductors combining steady-state and frequency-domain data,” Journal of Applied Physics, vol. 124, no. 105501, 2018, doi: 10.1063/1.5044494.
JENATSCH, Sandra, Stéphane ALTAZIN, Paul Anton WILL, Martin T. NEUKOM, Evelyne KNAPP, Simon ZÜFLE, Simone LENK, Sebastian REINEKE und Beat RUHSTALLER, 2018. Quantitative analysis of charge transport in intrinsic and doped organic semiconductors combining steady-state and frequency-domain data. Journal of Applied Physics. 2018. Bd. 124, Nr. 105501. DOI 10.1063/1.5044494
Jenatsch, Sandra, Stéphane Altazin, Paul Anton Will, Martin T. Neukom, Evelyne Knapp, Simon Züfle, Simone Lenk, Sebastian Reineke, and Beat Ruhstaller. 2018. “Quantitative Analysis of Charge Transport in Intrinsic and Doped Organic Semiconductors Combining Steady-State and Frequency-Domain Data.” Journal of Applied Physics 124 (105501). https://doi.org/10.1063/1.5044494.
Jenatsch, Sandra, et al. “Quantitative Analysis of Charge Transport in Intrinsic and Doped Organic Semiconductors Combining Steady-State and Frequency-Domain Data.” Journal of Applied Physics, vol. 124, no. 105501, 2018, https://doi.org/10.1063/1.5044494.
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