Title: Analysis of the bias-dependent split emission zone in phosphorescent OLEDs
Authors : Regnat, Markus
Pernstich, Kurt P.
Züfle, Simon
Ruhstaller, Beat
Published in : ACS applied materials & interfaces
Volume(Issue) : 10
Issue : 37
Pages : 31552
Pages to: 31559
Publisher / Ed. Institution : American Chemical Society
Issue Date: 27-Aug-2018
License (according to publishing contract) : Licence according to publishing contract
Type of review: Peer review (Publication)
Language : English
Subjects : OLED; Angle-dependent electroluminescence spectra; Emission zone; Exciton profile; Transient electroluminescence decay
Subject (DDC) : 621.3: Electrical engineering and electronics
Abstract: From s-polarized, angle-dependent measurements of the electroluminescence spectra in a three-layer phosphorescent organic light-emitting diode, we calculate the exciton distribution inside the 35 nm thick emission layer. The shape of the exciton profile changes with the applied bias due to differing field dependencies of the electron and hole mobilities. A split emission zone with high exciton densities at both sides of the emission layer is obtained, which is explained by the presence of energy barriers and similar electron and hole mobilities. A peak in the transient electroluminescence signal after turn-off and the application of a reverse bias is identified as a signature of a split emission zone.
Departement: School of Engineering
Organisational Unit: Institute of Computational Physics (ICP)
Publication type: Article in scientific Journal
DOI : 10.1021/acsami.8b09595
ISSN: 1944-8244
1944-8252
URI: https://digitalcollection.zhaw.ch/handle/11475/13174
Appears in Collections:Publikationen School of Engineering

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