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dc.contributor.authorRegnat, Markus-
dc.contributor.authorPernstich, Kurt P.-
dc.contributor.authorZüfle, Simon-
dc.contributor.authorRuhstaller, Beat-
dc.date.accessioned2018-11-23T08:56:03Z-
dc.date.available2018-11-23T08:56:03Z-
dc.date.issued2018-08-27-
dc.identifier.issn1944-8244de_CH
dc.identifier.issn1944-8252de_CH
dc.identifier.urihttps://digitalcollection.zhaw.ch/handle/11475/13174-
dc.description.abstractFrom s-polarized, angle-dependent measurements of the electroluminescence spectra in a three-layer phosphorescent organic light-emitting diode, we calculate the exciton distribution inside the 35 nm thick emission layer. The shape of the exciton profile changes with the applied bias due to differing field dependencies of the electron and hole mobilities. A split emission zone with high exciton densities at both sides of the emission layer is obtained, which is explained by the presence of energy barriers and similar electron and hole mobilities. A peak in the transient electroluminescence signal after turn-off and the application of a reverse bias is identified as a signature of a split emission zone.de_CH
dc.language.isoende_CH
dc.publisherAmerican Chemical Societyde_CH
dc.relation.ispartofACS applied materials & interfacesde_CH
dc.rightsLicence according to publishing contractde_CH
dc.subjectOLEDde_CH
dc.subjectAngle-dependent electroluminescence spectrade_CH
dc.subjectEmission zonede_CH
dc.subjectExciton profilede_CH
dc.subjectTransient electroluminescence decayde_CH
dc.subject.ddc621.3: Elektrotechnik und Elektronikde_CH
dc.titleAnalysis of the bias-dependent split emission zone in phosphorescent OLEDsde_CH
dc.typeBeitrag in wissenschaftlicher Zeitschriftde_CH
dcterms.typeTextde_CH
zhaw.departementSchool of Engineeringde_CH
zhaw.organisationalunitInstitute of Computational Physics (ICP)de_CH
dc.identifier.doi10.1021/acsami.8b09595de_CH
dc.identifier.pmid30148341de_CH
zhaw.funding.euNode_CH
zhaw.issue37de_CH
zhaw.originated.zhawYesde_CH
zhaw.pages.end31559de_CH
zhaw.pages.start31552de_CH
zhaw.publication.statuspublishedVersionde_CH
zhaw.volume10de_CH
zhaw.publication.reviewPeer review (Publikation)de_CH
zhaw.funding.snf162230de_CH
Appears in Collections:Publikationen School of Engineering

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