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https://doi.org/10.21256/zhaw-13174| Publikationstyp: | Beitrag in wissenschaftlicher Zeitschrift |
| Art der Begutachtung: | Peer review (Publikation) |
| Titel: | Analysis of the bias-dependent split emission zone in phosphorescent OLEDs |
| Autor/-in: | Regnat, Markus Pernstich, Kurt P. Züfle, Simon Ruhstaller, Beat |
| DOI: | 10.1021/acsami.8b09595 10.21256/zhaw-13174 |
| Erschienen in: | ACS Applied Materials & Interfaces |
| Band(Heft): | 10 |
| Heft: | 37 |
| Seite(n): | 31552 |
| Seiten bis: | 31559 |
| Erscheinungsdatum: | 27-Aug-2018 |
| Verlag / Hrsg. Institution: | American Chemical Society |
| ISSN: | 1944-8244 1944-8252 |
| Sprache: | Englisch |
| Schlagwörter: | OLED; Angle-dependent electroluminescence spectra; Emission zone; Exciton profile; Transient electroluminescence decay |
| Fachgebiet (DDC): | 621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnik 621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnik |
| Zusammenfassung: | From s-polarized, angle-dependent measurements of the electroluminescence spectra in a three-layer phosphorescent organic light-emitting diode, we calculate the exciton distribution inside the 35 nm thick emission layer. The shape of the exciton profile changes with the applied bias due to differing field dependencies of the electron and hole mobilities. A split emission zone with high exciton densities at both sides of the emission layer is obtained, which is explained by the presence of energy barriers and similar electron and hole mobilities. A peak in the transient electroluminescence signal after turn-off and the application of a reverse bias is identified as a signature of a split emission zone. |
| URI: | https://digitalcollection.zhaw.ch/handle/11475/13174 |
| Volltext Version: | Publizierte Version |
| Lizenz (gemäss Verlagsvertrag): | Lizenz gemäss Verlagsvertrag |
| Departement: | School of Engineering |
| Organisationseinheit: | Institute of Computational Physics (ICP) |
| Enthalten in den Sammlungen: | Publikationen School of Engineering |
Dateien zu dieser Ressource:
| Datei | Beschreibung | Größe | Format | |
|---|---|---|---|---|
| 2018_Regnat-etal_Bias-dependent-split-emission-zone-phosphorescent-OLEDs.pdf | 3.23 MB | Adobe PDF |  Öffnen/Anzeigen |
Zur Langanzeige
Regnat, M., Pernstich, K. P., Züfle, S., & Ruhstaller, B. (2018). Analysis of the bias-dependent split emission zone in phosphorescent OLEDs. ACS Applied Materials & Interfaces, 10(37), 31552–31559. https://doi.org/10.1021/acsami.8b09595
Regnat, M. et al. (2018) ‘Analysis of the bias-dependent split emission zone in phosphorescent OLEDs’, ACS Applied Materials & Interfaces, 10(37), pp. 31552–31559. Available at: https://doi.org/10.1021/acsami.8b09595.
M. Regnat, K. P. Pernstich, S. Züfle, and B. Ruhstaller, “Analysis of the bias-dependent split emission zone in phosphorescent OLEDs,” ACS Applied Materials & Interfaces, vol. 10, no. 37, pp. 31552–31559, Aug. 2018, doi: 10.1021/acsami.8b09595.
REGNAT, Markus, Kurt P. PERNSTICH, Simon ZÜFLE und Beat RUHSTALLER, 2018. Analysis of the bias-dependent split emission zone in phosphorescent OLEDs. ACS Applied Materials & Interfaces. 27 August 2018. Bd. 10, Nr. 37, S. 31552–31559. DOI 10.1021/acsami.8b09595
Regnat, Markus, Kurt P. Pernstich, Simon Züfle, and Beat Ruhstaller. 2018. “Analysis of the Bias-Dependent Split Emission Zone in Phosphorescent OLEDs.” ACS Applied Materials & Interfaces 10 (37): 31552–59. https://doi.org/10.1021/acsami.8b09595.
Regnat, Markus, et al. “Analysis of the Bias-Dependent Split Emission Zone in Phosphorescent OLEDs.” ACS Applied Materials & Interfaces, vol. 10, no. 37, Aug. 2018, pp. 31552–59, https://doi.org/10.1021/acsami.8b09595.
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