|Title:||Numerical impedance analysis for organic semiconductors with exponential distribution of localized states|
|Authors :||Knapp, Evelyne|
|Published in :||Applied Physics Letters|
|Publisher / Ed. Institution :||AIP Publishing|
|License (according to publishing contract) :||Licence according to publishing contract|
|Type of review:||Peer review (Publication)|
|Subject (DDC) :||530: Physics |
621.3: Electrical engineering and electronics
|Abstract:||We present a comprehensive numerical impedance spectroscopy analysis of an organic semiconductor device. A physical model that considers localized states is combined with a space- and frequency-resolved numerical framework. We study the details of the frequency-dependent capacitance of an electron-only device and distinguish different trapping regimes depending on the parameters. Depending on the choice of the trapping parameters, a capacitance rise at low frequency is observed. The extraction of the characteristic temperature of the exponential of the trap density of states (DOS) by a simplified method by T. Okachi et al. [Appl. Phys. Lett. 94, 043301(2009)] is investigated.|
|Departement:||School of Engineering|
|Organisational Unit:||Institute of Computational Physics (ICP)|
|Publication type:||Article in scientific Journal|
|Appears in Collections:||Publikationen School of Engineering|
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