Title: Numerical impedance analysis for organic semiconductors with exponential distribution of localized states
Authors : Knapp, Evelyne
Ruhstaller, Beat
Published in : Applied Physics Letters
Volume(Issue) : 99
Issue : 9
Publisher / Ed. Institution : AIP Publishing
Issue Date: 2011
License (according to publishing contract) : Licence according to publishing contract
Type of review: Peer review (Publication)
Language : English
Subject (DDC) : 530: Physics
621.3: Electrical engineering and electronics
Abstract: We present a comprehensive numerical impedance spectroscopy analysis of an organic semiconductor device. A physical model that considers localized states is combined with a space- and frequency-resolved numerical framework. We study the details of the frequency-dependent capacitance of an electron-only device and distinguish different trapping regimes depending on the parameters. Depending on the choice of the trapping parameters, a capacitance rise at low frequency is observed. The extraction of the characteristic temperature of the exponential of the trap density of states (DOS) by a simplified method by T. Okachi et al. [Appl. Phys. Lett. 94, 043301(2009)] is investigated.
Departement: School of Engineering
Organisational Unit: Institute of Computational Physics (ICP)
Publication type: Article in scientific Journal
DOI : 10.1063/1.3633109
ISSN: 0003-6951
URI: https://digitalcollection.zhaw.ch/handle/11475/7039
Appears in Collections:Publikationen School of Engineering

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