Numerical impedance analysis for organic semiconductors with exponential distribution of localized states

Knapp, Evelyne; Ruhstaller, Beat

doi:10.1063/1.3633109

Full metadata record

DC Field	Value	Language
dc.contributor.author	Knapp, Evelyne	-
dc.contributor.author	Ruhstaller, Beat	-
dc.date.accessioned	2018-06-18T09:36:32Z	-
dc.date.available	2018-06-18T09:36:32Z	-
dc.date.issued	2011	-
dc.identifier.issn	0003-6951	de_CH
dc.identifier.issn	1077-3118	de_CH
dc.identifier.uri	https://digitalcollection.zhaw.ch/handle/11475/7039	-
dc.description.abstract	We present a comprehensive numerical impedance spectroscopy analysis of an organic semiconductor device. A physical model that considers localized states is combined with a space- and frequency-resolved numerical framework. We study the details of the frequency-dependent capacitance of an electron-only device and distinguish different trapping regimes depending on the parameters. Depending on the choice of the trapping parameters, a capacitance rise at low frequency is observed. The extraction of the characteristic temperature of the exponential of the trap density of states (DOS) by a simplified method by T. Okachi et al. [Appl. Phys. Lett. 94, 043301(2009)] is investigated.	de_CH
dc.language.iso	en	de_CH
dc.publisher	American Institute of Physics	de_CH
dc.relation.ispartof	Applied Physics Letters	de_CH
dc.rights	Licence according to publishing contract	de_CH
dc.subject.ddc	530: Physik	de_CH
dc.subject.ddc	621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnik	de_CH
dc.title	Numerical impedance analysis for organic semiconductors with exponential distribution of localized states	de_CH
dc.type	Beitrag in wissenschaftlicher Zeitschrift	de_CH
dcterms.type	Text	de_CH
zhaw.departement	School of Engineering	de_CH
zhaw.organisationalunit	Institute of Computational Physics (ICP)	de_CH
dc.identifier.doi	10.1063/1.3633109	de_CH
zhaw.funding.eu	No	de_CH
zhaw.issue	9	de_CH
zhaw.originated.zhaw	Yes	de_CH
zhaw.publication.status	publishedVersion	de_CH
zhaw.volume	99	de_CH
zhaw.publication.review	Peer review (Publikation)	de_CH
Appears in collections:	Publikationen School of Engineering

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Knapp, E., & Ruhstaller, B. (2011). Numerical impedance analysis for organic semiconductors with exponential distribution of localized states. Applied Physics Letters, 99(9). https://doi.org/10.1063/1.3633109

Knapp, E. and Ruhstaller, B. (2011) ‘Numerical impedance analysis for organic semiconductors with exponential distribution of localized states’, Applied Physics Letters, 99(9). Available at: https://doi.org/10.1063/1.3633109.

E. Knapp and B. Ruhstaller, “Numerical impedance analysis for organic semiconductors with exponential distribution of localized states,” Applied Physics Letters, vol. 99, no. 9, 2011, doi: 10.1063/1.3633109.

KNAPP, Evelyne und Beat RUHSTALLER, 2011. Numerical impedance analysis for organic semiconductors with exponential distribution of localized states. Applied Physics Letters. 2011. Bd. 99, Nr. 9. DOI 10.1063/1.3633109

Knapp, Evelyne, and Beat Ruhstaller. 2011. “Numerical Impedance Analysis for Organic Semiconductors with Exponential Distribution of Localized States.” Applied Physics Letters 99 (9). https://doi.org/10.1063/1.3633109.

Knapp, Evelyne, and Beat Ruhstaller. “Numerical Impedance Analysis for Organic Semiconductors with Exponential Distribution of Localized States.” Applied Physics Letters, vol. 99, no. 9, 2011, https://doi.org/10.1063/1.3633109.