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https://doi.org/10.21256/zhaw-1984| Publikationstyp: | Beitrag in wissenschaftlicher Zeitschrift |
| Art der Begutachtung: | Peer review (Publikation) |
| Titel: | Electrothermal simulation of large-area semiconductor devices |
| Autor/-in: | Kirsch, Christoph Altazin, Stéphane Hiestand, Roman Beierlein, Tilman Ferrini, Rolando Offermans, Ton Pennick, L. Ruhstaller, Beat |
| DOI: | 10.21256/zhaw-1984 10.21152/1750-9548.11.2.127 |
| Erschienen in: | The International Journal of Multiphysics |
| Band(Heft): | 11 |
| Heft: | 2 |
| Seite(n): | 127 |
| Seiten bis: | 136 |
| Erscheinungsdatum: | 2017 |
| Verlag / Hrsg. Institution: | International Society of Multiphysics |
| ISSN: | 1750-9548 2048-3961 |
| Sprache: | Englisch |
| Fachgebiet (DDC): | 621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnik |
| Zusammenfassung: | The lateral charge transport in thin-film semiconductor devices is affected by the sheet resistance of the various layers. This may lead to a non-uniform current distribution across a large-area device resulting in inhomogeneous luminance, for example, as observed in organic light-emitting diodes. The resistive loss in electrical energy is converted into thermal energy via Joule heating, which results in a temperature increase inside the device. On the other hand, the charge transport properties of the device materials are also temperature-dependent, such that we are facing a two-way coupled electrothermal problem. It has been demonstrated that adding thermal effects to an electrical model significantly changes the results. We present a mathematical model for the steady-state distribution of the electric potential and of the temperature across one electrode of a large-area semiconductor device, as well as numerical solutions obtained using the finite element method. |
| URI: | https://digitalcollection.zhaw.ch/handle/11475/6805 |
| Volltext Version: | Publizierte Version |
| Lizenz (gemäss Verlagsvertrag): | CC BY 4.0: Namensnennung 4.0 International |
| Departement: | Life Sciences und Facility Management |
| Organisationseinheit: | Institute of Computational Physics (ICP) |
| Enthalten in den Sammlungen: | Publikationen Life Sciences und Facility Management |
Dateien zu dieser Ressource:
| Datei | Beschreibung | Größe | Format | |
|---|---|---|---|---|
| 2017_Kirsch_Eletrothermal Simulation_Journal Multiphysics.pdf | 480.83 kB | Adobe PDF |  Öffnen/Anzeigen |
Zur Langanzeige
Kirsch, C., Altazin, S., Hiestand, R., Beierlein, T., Ferrini, R., Offermans, T., Pennick, L., & Ruhstaller, B. (2017). Electrothermal simulation of large-area semiconductor devices. The International Journal of Multiphysics, 11(2), 127–136. https://doi.org/10.21256/zhaw-1984
Kirsch, C. et al. (2017) ‘Electrothermal simulation of large-area semiconductor devices’, The International Journal of Multiphysics, 11(2), pp. 127–136. Available at: https://doi.org/10.21256/zhaw-1984.
C. Kirsch et al., “Electrothermal simulation of large-area semiconductor devices,” The International Journal of Multiphysics, vol. 11, no. 2, pp. 127–136, 2017, doi: 10.21256/zhaw-1984.
KIRSCH, Christoph, Stéphane ALTAZIN, Roman HIESTAND, Tilman BEIERLEIN, Rolando FERRINI, Ton OFFERMANS, L. PENNICK und Beat RUHSTALLER, 2017. Electrothermal simulation of large-area semiconductor devices. The International Journal of Multiphysics. 2017. Bd. 11, Nr. 2, S. 127–136. DOI 10.21256/zhaw-1984
Kirsch, Christoph, Stéphane Altazin, Roman Hiestand, Tilman Beierlein, Rolando Ferrini, Ton Offermans, L. Pennick, and Beat Ruhstaller. 2017. “Electrothermal Simulation of Large-Area Semiconductor Devices.” The International Journal of Multiphysics 11 (2): 127–36. https://doi.org/10.21256/zhaw-1984.
Kirsch, Christoph, et al. “Electrothermal Simulation of Large-Area Semiconductor Devices.” The International Journal of Multiphysics, vol. 11, no. 2, 2017, pp. 127–36, https://doi.org/10.21256/zhaw-1984.
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