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Please use this identifier to cite or link to this item: https://doi.org/10.21256/zhaw-1984
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dc.contributor.authorKirsch, Christoph-
dc.contributor.authorAltazin, Stéphane-
dc.contributor.authorHiestand, Roman-
dc.contributor.authorBeierlein, Tilman-
dc.contributor.authorFerrini, Rolando-
dc.contributor.authorOffermans, Ton-
dc.contributor.authorPennick, L.-
dc.contributor.authorRuhstaller, Beat-
dc.date.accessioned2018-06-13T08:38:58Z-
dc.date.available2018-06-13T08:38:58Z-
dc.date.issued2017-
dc.identifier.issn1750-9548de_CH
dc.identifier.issn2048-3961de_CH
dc.identifier.urihttps://digitalcollection.zhaw.ch/handle/11475/6805-
dc.description.abstractThe lateral charge transport in thin-film semiconductor devices is affected by the sheet resistance of the various layers. This may lead to a non-uniform current distribution across a large-area device resulting in inhomogeneous luminance, for example, as observed in organic light-emitting diodes. The resistive loss in electrical energy is converted into thermal energy via Joule heating, which results in a temperature increase inside the device. On the other hand, the charge transport properties of the device materials are also temperature-dependent, such that we are facing a two-way coupled electrothermal problem. It has been demonstrated that adding thermal effects to an electrical model significantly changes the results. We present a mathematical model for the steady-state distribution of the electric potential and of the temperature across one electrode of a large-area semiconductor device, as well as numerical solutions obtained using the finite element method.de_CH
dc.language.isoende_CH
dc.publisherInternational Society of Multiphysicsde_CH
dc.relation.ispartofThe International Journal of Multiphysicsde_CH
dc.rightshttp://creativecommons.org/licenses/by/4.0/de_CH
dc.subject.ddc621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnikde_CH
dc.titleElectrothermal simulation of large-area semiconductor devicesde_CH
dc.typeBeitrag in wissenschaftlicher Zeitschriftde_CH
dcterms.typeTextde_CH
zhaw.departementLife Sciences und Facility Managementde_CH
zhaw.organisationalunitInstitute of Computational Physics (ICP)de_CH
dc.identifier.doi10.21256/zhaw-1984-
dc.identifier.doi10.21152/1750-9548.11.2.127de_CH
zhaw.funding.euNode_CH
zhaw.issue2de_CH
zhaw.originated.zhawYesde_CH
zhaw.pages.end136de_CH
zhaw.pages.start127de_CH
zhaw.publication.statuspublishedVersionde_CH
zhaw.volume11de_CH
zhaw.publication.reviewPeer review (Publikation)de_CH
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Kirsch, C., Altazin, S., Hiestand, R., Beierlein, T., Ferrini, R., Offermans, T., Pennick, L., & Ruhstaller, B. (2017). Electrothermal simulation of large-area semiconductor devices. The International Journal of Multiphysics, 11(2), 127–136. https://doi.org/10.21256/zhaw-1984
Kirsch, C. et al. (2017) ‘Electrothermal simulation of large-area semiconductor devices’, The International Journal of Multiphysics, 11(2), pp. 127–136. Available at: https://doi.org/10.21256/zhaw-1984.
C. Kirsch et al., “Electrothermal simulation of large-area semiconductor devices,” The International Journal of Multiphysics, vol. 11, no. 2, pp. 127–136, 2017, doi: 10.21256/zhaw-1984.
KIRSCH, Christoph, Stéphane ALTAZIN, Roman HIESTAND, Tilman BEIERLEIN, Rolando FERRINI, Ton OFFERMANS, L. PENNICK und Beat RUHSTALLER, 2017. Electrothermal simulation of large-area semiconductor devices. The International Journal of Multiphysics. 2017. Bd. 11, Nr. 2, S. 127–136. DOI 10.21256/zhaw-1984
Kirsch, Christoph, Stéphane Altazin, Roman Hiestand, Tilman Beierlein, Rolando Ferrini, Ton Offermans, L. Pennick, and Beat Ruhstaller. 2017. “Electrothermal Simulation of Large-Area Semiconductor Devices.” The International Journal of Multiphysics 11 (2): 127–36. https://doi.org/10.21256/zhaw-1984.
Kirsch, Christoph, et al. “Electrothermal Simulation of Large-Area Semiconductor Devices.” The International Journal of Multiphysics, vol. 11, no. 2, 2017, pp. 127–36, https://doi.org/10.21256/zhaw-1984.


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