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Title: Electrothermal simulation of large-area semiconductor devices
Authors : Kirsch, Christoph
Altazin, Stéphane
Hiestand, Roman
Beierlein, Tilman
Ferrini, Rolando
Offermans, Ton
Pennick, L.
Ruhstaller, Beat
Published in : The International Journal of Multiphysics
Volume(Issue) : 11
Issue : 2
Pages : 127
Pages to: 136
Publisher / Ed. Institution : International Society of Multiphysics
Issue Date: 2017
License (according to publishing contract) : CC BY 4.0: Namensnennung 4.0 International
Type of review: Peer review (Publication)
Language : English
Subject (DDC) : 621.3: Electrical engineering and electronics
Abstract: The lateral charge transport in thin-film semiconductor devices is affected by the sheet resistance of the various layers. This may lead to a non-uniform current distribution across a large-area device resulting in inhomogeneous luminance, for example, as observed in organic light-emitting diodes (Neyts et al., 2006). The resistive loss in electrical energy is converted into thermal energy via Joule heating, which results in a temperature increase inside the device. On the other hand, the charge transport properties of the device materials are also temperature-dependent, such that we are facing a two-way coupled electrothermal problem. It has been demonstrated that adding thermal effects to an electrical model significantly changes the results (Slawinski et al., 2011). We present a mathematical model for the steady-state distribution of the electric potential and of the temperature across one electrode of a large-area semiconductor device, as well as numerical solutions obtained using the finite element method.
Departement: Life Sciences und Facility Management
Organisational Unit: Institute of Computational Physics (ICP)
Publication type: Article in scientific Journal
DOI : 10.21152/1750-9548.11.2.127
ISSN: 1750-9548
Appears in Collections:Publikationen Life Sciences und Facility Management

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