Please use this identifier to cite or link to this item: https://doi.org/10.21256/zhaw-18982
Title: Influence of the bias-dependent emission zone on exciton quenching and OLED efficiency
Authors : Regnat, Markus
Pernstich, Kurt
Ruhstaller, Beat
et. al : No
Published in : Organic Electronics
Volume(Issue) : 70
Pages : 219
Pages to: 226
Publisher / Ed. Institution : Elsevier
Issue Date: Jul-2019
License (according to publishing contract) : CC BY-NC-ND 4.0: Attribution - Non commercial - No derivatives 4.0 International
Type of review: Peer review (publication)
Language : English
Subject (DDC) : 621.3: Electrical engineering and electronics
Abstract: We present an electro-optical model of a three-layer phosphorescent OLED which accurately describes the measured current efficiency and transient electroluminescence decay for different biases. Central findings are a bias-dependent emission zone, which influences light outcoupling as well as exciton quenching, and the presence of strong triplet-polaron quenching even at low bias. The measured current efficiency initially increases up to 9 V before it decreases, where the increase is found to be caused by reduced triplet-polaron quenching with holes, while the decrease is caused by a reduced light outcoupling and increased triplet-triplet annihilation. The numerical model allows identifying the individual contributions of the exciton continuity equation and explains the electroluminescence decay, which deviates significantly from a mono-exponential decay due to the dominating influence of exciton generation and quenching after the external bias is removed.
Departement: School of Engineering
Organisational Unit: Institute of Computational Physics (ICP)
Publication type: Article in scientific journal
DOI : 10.1016/j.orgel.2019.04.027
10.21256/zhaw-18982
ISSN: 1566-1199
URI: https://digitalcollection.zhaw.ch/handle/11475/18982
Appears in Collections:Publikationen School of Engineering

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