Please use this identifier to cite or link to this item: https://doi.org/10.21256/zhaw-18982
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dc.contributor.authorRegnat, Markus-
dc.contributor.authorPernstich, Kurt-
dc.contributor.authorRuhstaller, Beat-
dc.date.accessioned2019-12-19T13:35:20Z-
dc.date.available2019-12-19T13:35:20Z-
dc.date.issued2019-07-
dc.identifier.issn1566-1199de_CH
dc.identifier.urihttps://digitalcollection.zhaw.ch/handle/11475/18982-
dc.description.abstractWe present an electro-optical model of a three-layer phosphorescent OLED which accurately describes the measured current efficiency and transient electroluminescence decay for different biases. Central findings are a bias-dependent emission zone, which influences light outcoupling as well as exciton quenching, and the presence of strong triplet-polaron quenching even at low bias. The measured current efficiency initially increases up to 9 V before it decreases, where the increase is found to be caused by reduced triplet-polaron quenching with holes, while the decrease is caused by a reduced light outcoupling and increased triplet-triplet annihilation. The numerical model allows identifying the individual contributions of the exciton continuity equation and explains the electroluminescence decay, which deviates significantly from a mono-exponential decay due to the dominating influence of exciton generation and quenching after the external bias is removed.de_CH
dc.language.isoende_CH
dc.publisherElsevierde_CH
dc.relation.ispartofOrganic Electronicsde_CH
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0/de_CH
dc.subject.ddc621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnikde_CH
dc.subject.ddc621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnikde_CH
dc.titleInfluence of the bias-dependent emission zone on exciton quenching and OLED efficiencyde_CH
dc.typeBeitrag in wissenschaftlicher Zeitschriftde_CH
dcterms.typeTextde_CH
zhaw.departementSchool of Engineeringde_CH
zhaw.organisationalunitInstitute of Computational Physics (ICP)de_CH
dc.identifier.doi10.1016/j.orgel.2019.04.027de_CH
dc.identifier.doi10.21256/zhaw-18982-
zhaw.funding.euNode_CH
zhaw.originated.zhawYesde_CH
zhaw.pages.end226de_CH
zhaw.pages.start219de_CH
zhaw.publication.statuspublishedVersionde_CH
zhaw.volume70de_CH
zhaw.publication.reviewPeer review (Publikation)de_CH
zhaw.funding.snf162230de_CH
zhaw.webfeedPhotonicsde_CH
zhaw.author.additionalNode_CH
Appears in collections:Publikationen School of Engineering

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Regnat, M., Pernstich, K., & Ruhstaller, B. (2019). Influence of the bias-dependent emission zone on exciton quenching and OLED efficiency. Organic Electronics, 70, 219–226. https://doi.org/10.1016/j.orgel.2019.04.027
Regnat, M., Pernstich, K. and Ruhstaller, B. (2019) ‘Influence of the bias-dependent emission zone on exciton quenching and OLED efficiency’, Organic Electronics, 70, pp. 219–226. Available at: https://doi.org/10.1016/j.orgel.2019.04.027.
M. Regnat, K. Pernstich, and B. Ruhstaller, “Influence of the bias-dependent emission zone on exciton quenching and OLED efficiency,” Organic Electronics, vol. 70, pp. 219–226, Jul. 2019, doi: 10.1016/j.orgel.2019.04.027.
REGNAT, Markus, Kurt PERNSTICH und Beat RUHSTALLER, 2019. Influence of the bias-dependent emission zone on exciton quenching and OLED efficiency. Organic Electronics. Juli 2019. Bd. 70, S. 219–226. DOI 10.1016/j.orgel.2019.04.027
Regnat, Markus, Kurt Pernstich, and Beat Ruhstaller. 2019. “Influence of the Bias-Dependent Emission Zone on Exciton Quenching and OLED Efficiency.” Organic Electronics 70 (July): 219–26. https://doi.org/10.1016/j.orgel.2019.04.027.
Regnat, Markus, et al. “Influence of the Bias-Dependent Emission Zone on Exciton Quenching and OLED Efficiency.” Organic Electronics, vol. 70, July 2019, pp. 219–26, https://doi.org/10.1016/j.orgel.2019.04.027.


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