Title: Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters
Authors : Schumacher, Jürgen
Altermatt, Pietro
Heiser, Gernot
Aberle, Armin
Published in : Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo
Pages : 291
Pages to: 292
Conference details: 11th International Photovoltaic Science and Engineering Conference, Sapporo, Japan, 20 - 24 September 1999
Publisher / Ed. Institution: Sapporo
Issue Date: 1999
License (according to publishing contract) : Licence according to publishing contract
Type of review: Editorial review
Language : English
Subject (DDC) : 621.3: Electrical engineering and electronics
Departement: School of Engineering
Organisational Unit: Institute of Computational Physics (ICP)
Publication type: Conference Paper
URI: https://digitalcollection.zhaw.ch/handle/11475/11711
Appears in Collections:Publikationen School of Engineering

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.