Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters

Schumacher, Jürgen; Altermatt, Pietro; Heiser, Gernot; Aberle, Armin

Publication type:	Conference paper
Type of review:	Editorial review
Title:	Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters
Authors:	Schumacher, Jürgen Altermatt, Pietro Heiser, Gernot Aberle, Armin
Proceedings:	Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo
Page(s):	291
Pages to:	292
Conference details:	11th International PV Science and Engineering Conference, Sapporo, Japan, 20-24 September 1999
Issue Date:	1999
Publisher / Ed. Institution:	Sapporo
Language:	English
Subject (DDC):	621.3: Electrical, communications, control engineering
URI:	https://digitalcollection.zhaw.ch/handle/11475/11711
Fulltext version:	Published version
License (according to publishing contract):	Licence according to publishing contract
Departement:	School of Engineering
Organisational Unit:	Institute of Computational Physics (ICP)
Appears in collections:	Publikationen School of Engineering

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Schumacher, J., Altermatt, P., Heiser, G., & Aberle, A. (1999). Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters [Conference paper]. Technical Digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 291–292.

Schumacher, J. et al. (1999) ‘Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters’, in Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo. Sapporo, pp. 291–292.

J. Schumacher, P. Altermatt, G. Heiser, and A. Aberle, “Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters,” in Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 1999, pp. 291–292.

SCHUMACHER, Jürgen, Pietro ALTERMATT, Gernot HEISER und Armin ABERLE, 1999. Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters. In: Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo. Conference paper. Sapporo. 1999. S. 291–292

Schumacher, Jürgen, Pietro Altermatt, Gernot Heiser, and Armin Aberle. 1999. “Application of an Improved Band Gap Narrowing Model to the Numerical Simulation of Recombination Properties of Phosphorus Doped Silicon Emitters.” Conference paper. In Technical Digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 291–92. Sapporo.

Schumacher, Jürgen, et al. “Application of an Improved Band Gap Narrowing Model to the Numerical Simulation of Recombination Properties of Phosphorus Doped Silicon Emitters.” Technical Digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 1999, pp. 291–92.