|Title:||Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters|
|Authors :||Schumacher, Jürgen|
|Published in :||Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo|
|Conference details:||11th International Photovoltaic Science and Engineering Conference, Sapporo, Japan, 20 - 24 September 1999|
|Publisher / Ed. Institution:||Sapporo|
|License (according to publishing contract) :||Licence according to publishing contract|
|Type of review:||Editorial review|
|Subject (DDC) :||621.3: Electrical engineering and electronics|
|Departement:||School of Engineering|
|Organisational Unit:||Institute of Computational Physics (ICP)|
|Publication type:||Conference Paper|
|Appears in Collections:||Publikationen School of Engineering|
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