| Publikationstyp: | Konferenz: Paper |
| Art der Begutachtung: | Editorial review |
| Titel: | Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters |
| Autor/-in: | Schumacher, Jürgen Altermatt, Pietro Heiser, Gernot Aberle, Armin |
| Tagungsband: | Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo |
| Seite(n): | 291 |
| Seiten bis: | 292 |
| Angaben zur Konferenz: | 11th International PV Science and Engineering Conference, Sapporo, Japan, 20-24 September 1999 |
| Erscheinungsdatum: | 1999 |
| Verlag / Hrsg. Institution: | Sapporo |
| Sprache: | Englisch |
| Fachgebiet (DDC): | 621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnik |
| URI: | https://digitalcollection.zhaw.ch/handle/11475/11711 |
| Volltext Version: | Publizierte Version |
| Lizenz (gemäss Verlagsvertrag): | Lizenz gemäss Verlagsvertrag |
| Departement: | School of Engineering |
| Organisationseinheit: | Institute of Computational Physics (ICP) |
| Enthalten in den Sammlungen: | Publikationen School of Engineering |
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Schumacher, J., Altermatt, P., Heiser, G., & Aberle, A. (1999). Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters [Conference paper]. Technical Digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 291–292.
Schumacher, J. et al. (1999) ‘Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters’, in Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo. Sapporo, pp. 291–292.
J. Schumacher, P. Altermatt, G. Heiser, and A. Aberle, “Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters,” in Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 1999, pp. 291–292.
SCHUMACHER, Jürgen, Pietro ALTERMATT, Gernot HEISER und Armin ABERLE, 1999. Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters. In: Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo. Conference paper. Sapporo. 1999. S. 291–292
Schumacher, Jürgen, Pietro Altermatt, Gernot Heiser, and Armin Aberle. 1999. “Application of an Improved Band Gap Narrowing Model to the Numerical Simulation of Recombination Properties of Phosphorus Doped Silicon Emitters.” Conference paper. In Technical Digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 291–92. Sapporo.
Schumacher, Jürgen, et al. “Application of an Improved Band Gap Narrowing Model to the Numerical Simulation of Recombination Properties of Phosphorus Doped Silicon Emitters.” Technical Digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 1999, pp. 291–92.
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