Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters

Schumacher, Jürgen; Altermatt, Pietro; Heiser, Gernot; Aberle, Armin

doi:10.1016/S0927-0248(00)00082-9

Publication type:	Article in scientific journal
Type of review:	Peer review (publication)
Title:	Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters
Authors:	Schumacher, Jürgen Altermatt, Pietro Heiser, Gernot Aberle, Armin
DOI:	10.1016/S0927-0248(00)00082-9
Published in:	Solar Energy Materials & Solar Cells
Volume(Issue):	65
Issue:	1-4
Page(s):	95
Pages to:	103
Issue Date:	Jan-2001
Publisher / Ed. Institution:	Elsevier
ISSN:	0927-0248
Language:	English
Subjects:	Band-gap narrowing; Heavily doped silicon; Degeneracy; Numerical simulation
Subject (DDC):	621.3: Electrical, communications, control engineering
Abstract:	The commonly used band-gap narrowing (BGN) models for crystalline silicon do not describe heavily doped emitters with desirable precision. One of the reasons for this is that the applied BGN models were empirically derived from measurements assuming Boltzmann statistics. We apply a new BGN model derived by Schenk from quantum mechanical principles and demonstrate that carrier degeneracy and the new BGN model both substantially affect the electron-hole product within the emitter region. Simulated saturation current densities of heavily phosphorus-doped emitters, calculated with the new BGN model, are lower than results obtained with the widely used empirical BGN model of del Alamo.
URI:	https://digitalcollection.zhaw.ch/handle/11475/11581
Fulltext version:	Published version
License (according to publishing contract):	Licence according to publishing contract
Departement:	School of Engineering
Organisational Unit:	Institute of Computational Physics (ICP)
Appears in collections:	Publikationen School of Engineering

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Schumacher, J., Altermatt, P., Heiser, G., & Aberle, A. (2001). Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters. Solar Energy Materials & Solar Cells, 65(1-4), 95–103. https://doi.org/10.1016/S0927-0248(00)00082-9

Schumacher, J. et al. (2001) ‘Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters’, Solar Energy Materials & Solar Cells, 65(1-4), pp. 95–103. Available at: https://doi.org/10.1016/S0927-0248(00)00082-9.

J. Schumacher, P. Altermatt, G. Heiser, and A. Aberle, “Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters,” Solar Energy Materials & Solar Cells, vol. 65, no. 1-4, pp. 95–103, Jan. 2001, doi: 10.1016/S0927-0248(00)00082-9.

SCHUMACHER, Jürgen, Pietro ALTERMATT, Gernot HEISER und Armin ABERLE, 2001. Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters. Solar Energy Materials & Solar Cells. Januar 2001. Bd. 65, Nr. 1-4, S. 95–103. DOI 10.1016/S0927-0248(00)00082-9

Schumacher, Jürgen, Pietro Altermatt, Gernot Heiser, and Armin Aberle. 2001. “Application of an Improved Band Gap Narrowing Model to the Numerical Simulation of Recombination Properties of Phosphorus-Doped Silicon Emitters.” Solar Energy Materials & Solar Cells 65 (1-4): 95–103. https://doi.org/10.1016/S0927-0248(00)00082-9.

Schumacher, Jürgen, et al. “Application of an Improved Band Gap Narrowing Model to the Numerical Simulation of Recombination Properties of Phosphorus-Doped Silicon Emitters.” Solar Energy Materials & Solar Cells, vol. 65, no. 1-4, Jan. 2001, pp. 95–103, https://doi.org/10.1016/S0927-0248(00)00082-9.