| Publikationstyp: | Beitrag in wissenschaftlicher Zeitschrift |
| Art der Begutachtung: | Peer review (Publikation) |
| Titel: | Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters |
| Autor/-in: | Schumacher, Jürgen Altermatt, Pietro Heiser, Gernot Aberle, Armin |
| DOI: | 10.1016/S0927-0248(00)00082-9 |
| Erschienen in: | Solar Energy Materials & Solar Cells |
| Band(Heft): | 65 |
| Heft: | 1-4 |
| Seite(n): | 95 |
| Seiten bis: | 103 |
| Erscheinungsdatum: | Jan-2001 |
| Verlag / Hrsg. Institution: | Elsevier |
| ISSN: | 0927-0248 |
| Sprache: | Englisch |
| Schlagwörter: | Band-gap narrowing; Heavily doped silicon; Degeneracy; Numerical simulation |
| Fachgebiet (DDC): | 621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnik |
| Zusammenfassung: | The commonly used band-gap narrowing (BGN) models for crystalline silicon do not describe heavily doped emitters with desirable precision. One of the reasons for this is that the applied BGN models were empirically derived from measurements assuming Boltzmann statistics. We apply a new BGN model derived by Schenk from quantum mechanical principles and demonstrate that carrier degeneracy and the new BGN model both substantially affect the electron-hole product within the emitter region. Simulated saturation current densities of heavily phosphorus-doped emitters, calculated with the new BGN model, are lower than results obtained with the widely used empirical BGN model of del Alamo. |
| URI: | https://digitalcollection.zhaw.ch/handle/11475/11581 |
| Volltext Version: | Publizierte Version |
| Lizenz (gemäss Verlagsvertrag): | Lizenz gemäss Verlagsvertrag |
| Departement: | School of Engineering |
| Organisationseinheit: | Institute of Computational Physics (ICP) |
| Enthalten in den Sammlungen: | Publikationen School of Engineering |
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Schumacher, J., Altermatt, P., Heiser, G., & Aberle, A. (2001). Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters. Solar Energy Materials & Solar Cells, 65(1-4), 95–103. https://doi.org/10.1016/S0927-0248(00)00082-9
Schumacher, J. et al. (2001) ‘Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters’, Solar Energy Materials & Solar Cells, 65(1-4), pp. 95–103. Available at: https://doi.org/10.1016/S0927-0248(00)00082-9.
J. Schumacher, P. Altermatt, G. Heiser, and A. Aberle, “Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters,” Solar Energy Materials & Solar Cells, vol. 65, no. 1-4, pp. 95–103, Jan. 2001, doi: 10.1016/S0927-0248(00)00082-9.
SCHUMACHER, Jürgen, Pietro ALTERMATT, Gernot HEISER und Armin ABERLE, 2001. Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters. Solar Energy Materials & Solar Cells. Januar 2001. Bd. 65, Nr. 1-4, S. 95–103. DOI 10.1016/S0927-0248(00)00082-9
Schumacher, Jürgen, Pietro Altermatt, Gernot Heiser, and Armin Aberle. 2001. “Application of an Improved Band Gap Narrowing Model to the Numerical Simulation of Recombination Properties of Phosphorus-Doped Silicon Emitters.” Solar Energy Materials & Solar Cells 65 (1-4): 95–103. https://doi.org/10.1016/S0927-0248(00)00082-9.
Schumacher, Jürgen, et al. “Application of an Improved Band Gap Narrowing Model to the Numerical Simulation of Recombination Properties of Phosphorus-Doped Silicon Emitters.” Solar Energy Materials & Solar Cells, vol. 65, no. 1-4, Jan. 2001, pp. 95–103, https://doi.org/10.1016/S0927-0248(00)00082-9.
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