| Publikationstyp: | Beitrag in wissenschaftlicher Zeitschrift |
| Art der Begutachtung: | Peer review (Publikation) |
| Titel: | The role of shallow traps in dynamic characterization of organic semiconductor devices |
| Autor/-in: | Knapp, Evelyne Ruhstaller, Beat |
| DOI: | 10.1063/1.4739303 |
| Erschienen in: | Journal of Applied Physics |
| Band(Heft): | 112 |
| Heft: | 2 |
| Erscheinungsdatum: | Jun-2012 |
| Verlag / Hrsg. Institution: | American Institute of Physics |
| ISSN: | 0021-8979 1089-7550 |
| Sprache: | Englisch |
| Fachgebiet (DDC): | 621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnik |
| Zusammenfassung: | We present an analysis of charge mobility determination methods for the steady as well as the transient state and investigate shallow charge traps with respect to their dynamic behavior. We distinguish between fast and slow trap states in our numerical model corresponding to two characteristic regimes. The two regimes manifest themselves in both impedance spectroscopy and dark injection transient currents (DITC). Further we investigate the charge mobility obtained from dynamic simulations and relate it to the extracted charge mobility from steady-state current-voltage curves. To demonstrate the practical impact of these regimes, we apply our numerical model to the DITC that have commonly been used to determine the charge mobility in organic semiconductor devices. The obtained results from DITC studies strongly depend on the measurement conditions. Therefore we analyze the measurements of reference [Esward et al., J. Appl. Phys. 109, 093707 (2011)] and reproduce the effects of varying pulse off-times on the transient current qualitatively. Thus, our simulations are able to explain the experimental observations with the help of relaxation effects due to shallow traps. |
| URI: | https://digitalcollection.zhaw.ch/handle/11475/6931 |
| Volltext Version: | Publizierte Version |
| Lizenz (gemäss Verlagsvertrag): | Lizenz gemäss Verlagsvertrag |
| Departement: | School of Engineering |
| Organisationseinheit: | Institute of Computational Physics (ICP) |
| Enthalten in den Sammlungen: | Publikationen School of Engineering |
Dateien zu dieser Ressource:
Es gibt keine Dateien zu dieser Ressource.
Zur Langanzeige
Knapp, E., & Ruhstaller, B. (2012). The role of shallow traps in dynamic characterization of organic semiconductor devices. Journal of Applied Physics, 112(2). https://doi.org/10.1063/1.4739303
Knapp, E. and Ruhstaller, B. (2012) ‘The role of shallow traps in dynamic characterization of organic semiconductor devices’, Journal of Applied Physics, 112(2). Available at: https://doi.org/10.1063/1.4739303.
E. Knapp and B. Ruhstaller, “The role of shallow traps in dynamic characterization of organic semiconductor devices,” Journal of Applied Physics, vol. 112, no. 2, Jun. 2012, doi: 10.1063/1.4739303.
KNAPP, Evelyne und Beat RUHSTALLER, 2012. The role of shallow traps in dynamic characterization of organic semiconductor devices. Journal of Applied Physics. Juni 2012. Bd. 112, Nr. 2. DOI 10.1063/1.4739303
Knapp, Evelyne, and Beat Ruhstaller. 2012. “The Role of Shallow Traps in Dynamic Characterization of Organic Semiconductor Devices.” Journal of Applied Physics 112 (2). https://doi.org/10.1063/1.4739303.
Knapp, Evelyne, and Beat Ruhstaller. “The Role of Shallow Traps in Dynamic Characterization of Organic Semiconductor Devices.” Journal of Applied Physics, vol. 112, no. 2, June 2012, https://doi.org/10.1063/1.4739303.
Alle Ressourcen in diesem Repository sind urheberrechtlich geschützt, soweit nicht anderweitig angezeigt.