1. ZHAW digitalcollection
  2. School of Engineering
  3. Publikationen
  4. Publikationen School of Engineering
Full metadata record
DC FieldValueLanguage
dc.contributor.authorKnapp, Evelyne-
dc.contributor.authorRuhstaller, Beat-
dc.date.accessioned2018-06-15T11:49:46Z-
dc.date.available2018-06-15T11:49:46Z-
dc.date.issued2012-06-
dc.identifier.issn0021-8979de_CH
dc.identifier.issn1089-7550de_CH
dc.identifier.urihttps://digitalcollection.zhaw.ch/handle/11475/6931-
dc.description.abstractWe present an analysis of charge mobility determination methods for the steady as well as the transient state and investigate shallow charge traps with respect to their dynamic behavior. We distinguish between fast and slow trap states in our numerical model corresponding to two characteristic regimes. The two regimes manifest themselves in both impedance spectroscopy and dark injection transient currents (DITC). Further we investigate the charge mobility obtained from dynamic simulations and relate it to the extracted charge mobility from steady-state current-voltage curves. To demonstrate the practical impact of these regimes, we apply our numerical model to the DITC that have commonly been used to determine the charge mobility in organic semiconductor devices. The obtained results from DITC studies strongly depend on the measurement conditions. Therefore we analyze the measurements of reference [Esward et al., J. Appl. Phys. 109, 093707 (2011)] and reproduce the effects of varying pulse off-times on the transient current qualitatively. Thus, our simulations are able to explain the experimental observations with the help of relaxation effects due to shallow traps.de_CH
dc.language.isoende_CH
dc.publisherAmerican Institute of Physicsde_CH
dc.relation.ispartofJournal of Applied Physicsde_CH
dc.rightsLicence according to publishing contractde_CH
dc.subject.ddc621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnikde_CH
dc.titleThe role of shallow traps in dynamic characterization of organic semiconductor devicesde_CH
dc.typeBeitrag in wissenschaftlicher Zeitschriftde_CH
dcterms.typeTextde_CH
zhaw.departementSchool of Engineeringde_CH
zhaw.organisationalunitInstitute of Computational Physics (ICP)de_CH
dc.identifier.doi10.1063/1.4739303de_CH
zhaw.funding.euinfo:eu-repo/grantAgreement/EC/FP7/295368//Integrated Multidisciplinary & Multiscale Modeling for Organic Light-Emitting Diodes/IM3OLEDde_CH
zhaw.issue2de_CH
zhaw.originated.zhawYesde_CH
zhaw.publication.statuspublishedVersionde_CH
zhaw.volume112de_CH
zhaw.publication.reviewPeer review (Publikation)de_CH
Appears in collections:Publikationen School of Engineering

Files in This Item:
There are no files associated with this item.
Show simple item record
Knapp, E., & Ruhstaller, B. (2012). The role of shallow traps in dynamic characterization of organic semiconductor devices. Journal of Applied Physics, 112(2). https://doi.org/10.1063/1.4739303
Knapp, E. and Ruhstaller, B. (2012) ‘The role of shallow traps in dynamic characterization of organic semiconductor devices’, Journal of Applied Physics, 112(2). Available at: https://doi.org/10.1063/1.4739303.
E. Knapp and B. Ruhstaller, “The role of shallow traps in dynamic characterization of organic semiconductor devices,” Journal of Applied Physics, vol. 112, no. 2, Jun. 2012, doi: 10.1063/1.4739303.
KNAPP, Evelyne und Beat RUHSTALLER, 2012. The role of shallow traps in dynamic characterization of organic semiconductor devices. Journal of Applied Physics. Juni 2012. Bd. 112, Nr. 2. DOI 10.1063/1.4739303
Knapp, Evelyne, and Beat Ruhstaller. 2012. “The Role of Shallow Traps in Dynamic Characterization of Organic Semiconductor Devices.” Journal of Applied Physics 112 (2). https://doi.org/10.1063/1.4739303.
Knapp, Evelyne, and Beat Ruhstaller. “The Role of Shallow Traps in Dynamic Characterization of Organic Semiconductor Devices.” Journal of Applied Physics, vol. 112, no. 2, June 2012, https://doi.org/10.1063/1.4739303.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.