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dc.contributor.authorChen, Zhi-
dc.contributor.authorWang, Jie-
dc.contributor.authorJin, Hui-
dc.contributor.authorYang, Jianming-
dc.contributor.authorBao, Qinye-
dc.contributor.authorMa, Zaifei-
dc.contributor.authorTress, Wolfgang-
dc.contributor.authorTang, Zheng-
dc.date.accessioned2021-06-10T14:36:14Z-
dc.date.available2021-06-10T14:36:14Z-
dc.date.issued2021-
dc.identifier.issn2050-7526de_CH
dc.identifier.issn2050-7534de_CH
dc.identifier.urihttps://digitalcollection.zhaw.ch/handle/11475/22618-
dc.description.abstractSolution-processed ZnO is commonly used as a charge-selective interlayer between an absorber and electrode in organic solar cells. In this work, the impact of the resistance of the sol–gel grown ZnO interlayer on solar cell performance is investigated. We find that the UV-induced doping effect leads to a significantly reduced ZnO resistance, which gives rise to an underestimated photoactive area and thus overestimated short-circuit current density (Jsc) for the solar cell measured without an aperture. Moreover, we show that this so far mostly overlooked issue can be unintentionally triggered during common fabrication and characterization processes, because the UV photons flux from a solar simulator, or from a light source for encapsulating the solar cell, are already sufficient in leading to the too much increased lateral conductivity of the ZnO. Finally, we demonstrate that interlayers with rather high sheet resistance can lead to an overestimation of Jsc (e.g. by 10% for a 10 MΩ per square interlayer in a 2 mm2 device). Therefore, the validity of the argument that high-resistance interlayers do not lead to overestimated Jsc should always be carefully evaluated.de_CH
dc.language.isoende_CH
dc.publisherRoyal Society of Chemistryde_CH
dc.relation.ispartofJournal of Materials Chemistry Cde_CH
dc.rightsLicence according to publishing contractde_CH
dc.subject.ddc621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnikde_CH
dc.titleAn underestimated photoactive area in organic solar cells based on a ZnO interlayerde_CH
dc.typeBeitrag in wissenschaftlicher Zeitschriftde_CH
dcterms.typeTextde_CH
zhaw.departementSchool of Engineeringde_CH
zhaw.organisationalunitInstitute of Computational Physics (ICP)de_CH
dc.identifier.doi10.1039/D1TC00745Ade_CH
zhaw.funding.euNode_CH
zhaw.issue35de_CH
zhaw.originated.zhawYesde_CH
zhaw.pages.end11760de_CH
zhaw.pages.start11753de_CH
zhaw.publication.statuspublishedVersionde_CH
zhaw.volume9de_CH
zhaw.publication.reviewPeer review (Publikation)de_CH
zhaw.webfeedErneuerbare Energiende_CH
zhaw.webfeedPhotonicsde_CH
zhaw.author.additionalNode_CH
zhaw.display.portraitYesde_CH
Appears in collections:Publikationen School of Engineering

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