Publication type: Article in scientific journal
Type of review: Peer review (publication)
Title: An underestimated photoactive area in organic solar cells based on a ZnO interlayer
Authors: Chen, Zhi
Wang, Jie
Jin, Hui
Yang, Jianming
Bao, Qinye
Ma, Zaifei
Tress, Wolfgang
Tang, Zheng
et. al: No
DOI: 10.1039/D1TC00745A
Published in: Journal of Materials Chemistry C
Volume(Issue): 9
Issue: 35
Page(s): 11753
Pages to: 11760
Issue Date: 2021
Publisher / Ed. Institution: Royal Society of Chemistry
ISSN: 2050-7526
Language: English
Subject (DDC): 621.3: Electrical, communications, control engineering
Abstract: Solution-processed ZnO is commonly used as a charge-selective interlayer between an absorber and electrode in organic solar cells. In this work, the impact of the resistance of the sol–gel grown ZnO interlayer on solar cell performance is investigated. We find that the UV-induced doping effect leads to a significantly reduced ZnO resistance, which gives rise to an underestimated photoactive area and thus overestimated short-circuit current density (Jsc) for the solar cell measured without an aperture. Moreover, we show that this so far mostly overlooked issue can be unintentionally triggered during common fabrication and characterization processes, because the UV photons flux from a solar simulator, or from a light source for encapsulating the solar cell, are already sufficient in leading to the too much increased lateral conductivity of the ZnO. Finally, we demonstrate that interlayers with rather high sheet resistance can lead to an overestimation of Jsc (e.g. by 10% for a 10 MΩ per square interlayer in a 2 mm2 device). Therefore, the validity of the argument that high-resistance interlayers do not lead to overestimated Jsc should always be carefully evaluated.
Fulltext version: Published version
License (according to publishing contract): Licence according to publishing contract
Departement: School of Engineering
Organisational Unit: Institute of Computational Physics (ICP)
Appears in collections:Publikationen School of Engineering

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