Title: Industrial Si solar cells with Cu based plated contacts
Authors : Horzel, Jörg T.
Shengzhao, Yuan
Bay, Norbert
Passig, Michael
Pysch, Damian
Kühnlein, Holger
Nussbaumer, Hartmut
Verlinden, Pierre
Published in : IEEE journal of photovoltaics
Volume(Issue) : 5
Issue : 6
Pages : 1595
Pages to: 1600
Publisher / Ed. Institution : IEEE
Issue Date: 28-Sep-2015
License (according to publishing contract) : Licence according to publishing contract
Language : English
Subject (DDC) : 621.3: Electrical engineering and electronics
Abstract: Until today, most industrial c-Si solar cells have been limited by front emitter and front metal contact properties. This study demonstrates that laser ablation and inline plating of nickel and copper followed by inline thermal annealing results in improved performance and reduced cost. Stable efficiencies exceeding 20.8% on p-type PERC CZ-Si solar cells have been independently confirmed by FhG-ISE CalLab. Average fill factors up to 80.8% have been demonstrated on large-area solar cells with a homogeneous emitter P surface concentration below 4 × 10 19 P/cm 3 . Reliable module performance according to the IEC61215 standard is reported.
Departement: School of Engineering
Organisational Unit: Institute of Energy Systems and Fluid Engineering (IEFE)
Publication type: Contribution to Magazine or Newspaper
DOI : 10.1109/JPHOTOV.2015.2478067
ISSN: 2156-3381
URI: https://digitalcollection.zhaw.ch/handle/11475/13181
Appears in Collections:Publikationen School of Engineering

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