|Title:||Industrial Si solar cells with Cu based plated contacts|
|Authors :||Horzel, Jörg T.|
|Published in :||IEEE journal of photovoltaics|
|Publisher / Ed. Institution :||IEEE|
|License (according to publishing contract) :||Licence according to publishing contract|
|Subject (DDC) :||621.3: Electrical engineering and electronics|
|Abstract:||Until today, most industrial c-Si solar cells have been limited by front emitter and front metal contact properties. This study demonstrates that laser ablation and inline plating of nickel and copper followed by inline thermal annealing results in improved performance and reduced cost. Stable efficiencies exceeding 20.8% on p-type PERC CZ-Si solar cells have been independently confirmed by FhG-ISE CalLab. Average fill factors up to 80.8% have been demonstrated on large-area solar cells with a homogeneous emitter P surface concentration below 4 × 10 19 P/cm 3 . Reliable module performance according to the IEC61215 standard is reported.|
|Departement:||School of Engineering|
|Organisational Unit:||Institute of Energy Systems and Fluid Engineering (IEFE)|
|Publication type:||Contribution to Magazine or Newspaper|
|Appears in Collections:||Publikationen School of Engineering|
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