|Title:||Ultraviolet/ozone treatment to reduce metal-graphene contact resistance|
|Authors :||Li, Wei|
Hight Walker, A. R.
Hacker, Christina A.
Richter, Curt A.
Gundlach, David J.
|Published in :||Applied physics letters|
|Publisher / Ed. Institution :||American Institute of Physics|
|License (according to publishing contract) :||Licence according to publishing contract|
|Type of review:||Peer review (Publication)|
|Subjects :||Physics - Materials Science; Physics - Mesoscopic Systems and Quantum Hall Effect|
|Subject (DDC) :||530: Physics|
|Abstract:||We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition grown single layer graphene. Ultraviolet ozone treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was found to reduce interface contamination originating from incomplete removal of poly(methyl-methacrylate) and photoresist. Our control experiment shows that exposure times up to 10 min did not introduce significant disorder in the graphene as characterized by Raman spectroscopy. By using the described approach, contact resistance of less than 200 Ω μm was achieved for 25 min ultraviolet ozone treatment, while not significantly altering the electrical properties of the graphene channel region of devices.|
|Departement:||School of Engineering|
|Organisational Unit:||Institute of Computational Physics (ICP)|
|Publication type:||Article in scientific Journal|
|Appears in Collections:||Publikationen School of Engineering|
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