Numerical analysis of steady-state and transient charge transport in organic semiconductor devices

Knapp, Evelyne; Ruhstaller, Beat

doi:10.1007/s11082-011-9443-1

Please use this identifier to cite or link to this item: https://doi.org/10.21256/zhaw-7040

Full metadata record

DC Field	Value	Language
dc.contributor.author	Knapp, Evelyne	-
dc.contributor.author	Ruhstaller, Beat	-
dc.date.accessioned	2018-06-18T09:40:37Z	-
dc.date.available	2018-06-18T09:40:37Z	-
dc.date.issued	2011-10-11	-
dc.identifier.issn	0306-8919	de_CH
dc.identifier.uri	https://digitalcollection.zhaw.ch/handle/11475/7040	-
dc.description.abstract	A one-dimensional numerical model for the simulation of organic semiconductor devices such as organic light-emitting devices and solar cells is presented. The model accounts for the energetic disorder in organic semiconductors and assumes that charge transport takes place by a hopping process between uncorrelated sites. Therefore a Gaussian density of states and the use of the Fermi-Dirac statistics are introduced. The model includes density-, field- and temperature-dependent mobilities as well as the generalized Einstein relation. The numerical methods to solve the underlying drift-diffusion problem perform well in combination with the novel physical model ingredients. We demonstrate efficient numerical techniques that we employ to simulate common experimental characterization techniques such as current-voltage, dark-injection transient and electrical impedance measurements. This is crucial for physical model validation and for material parameter extraction. We also highlight how the numerical solution of the novel model differs from the analytical solution of the simplified drift-only model.	de_CH
dc.language.iso	en	de_CH
dc.publisher	Kluwer	de_CH
dc.relation.ispartof	Optical and Quantum Electronics	de_CH
dc.rights	Licence according to publishing contract	de_CH
dc.subject.ddc	530: Physik	de_CH
dc.subject.ddc	621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnik	de_CH
dc.title	Numerical analysis of steady-state and transient charge transport in organic semiconductor devices	de_CH
dc.type	Beitrag in wissenschaftlicher Zeitschrift	de_CH
dcterms.type	Text	de_CH
zhaw.departement	School of Engineering	de_CH
zhaw.organisationalunit	Institute of Computational Physics (ICP)	de_CH
dc.identifier.doi	10.1007/s11082-011-9443-1	de_CH
dc.identifier.doi	10.21256/zhaw-7040	-
zhaw.funding.eu	No	de_CH
zhaw.issue	11–13	de_CH
zhaw.originated.zhaw	Yes	de_CH
zhaw.pages.end	677	de_CH
zhaw.pages.start	667	de_CH
zhaw.publication.status	publishedVersion	de_CH
zhaw.volume	42	de_CH
zhaw.publication.review	Peer review (Publikation)	de_CH
Appears in collections:	Publikationen School of Engineering

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Knapp, E., & Ruhstaller, B. (2011). Numerical analysis of steady-state and transient charge transport in organic semiconductor devices. Optical and Quantum Electronics, 42(11–13), 667–677. https://doi.org/10.1007/s11082-011-9443-1

Knapp, E. and Ruhstaller, B. (2011) ‘Numerical analysis of steady-state and transient charge transport in organic semiconductor devices’, Optical and Quantum Electronics, 42(11–13), pp. 667–677. Available at: https://doi.org/10.1007/s11082-011-9443-1.

E. Knapp and B. Ruhstaller, “Numerical analysis of steady-state and transient charge transport in organic semiconductor devices,” Optical and Quantum Electronics, vol. 42, no. 11–13, pp. 667–677, Oct. 2011, doi: 10.1007/s11082-011-9443-1.

KNAPP, Evelyne und Beat RUHSTALLER, 2011. Numerical analysis of steady-state and transient charge transport in organic semiconductor devices. Optical and Quantum Electronics. 11 Oktober 2011. Bd. 42, Nr. 11–13, S. 667–677. DOI 10.1007/s11082-011-9443-1

Knapp, Evelyne, and Beat Ruhstaller. 2011. “Numerical Analysis of Steady-State and Transient Charge Transport in Organic Semiconductor Devices.” Optical and Quantum Electronics 42 (11–13): 667–77. https://doi.org/10.1007/s11082-011-9443-1.

Knapp, Evelyne, and Beat Ruhstaller. “Numerical Analysis of Steady-State and Transient Charge Transport in Organic Semiconductor Devices.” Optical and Quantum Electronics, vol. 42, no. 11–13, Oct. 2011, pp. 667–77, https://doi.org/10.1007/s11082-011-9443-1.