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https://doi.org/10.21256/zhaw-1989Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Knapp, Evelyne | - |
| dc.contributor.author | Häusermann, Roger | - |
| dc.contributor.author | Schwarzenbach, Hansueli | - |
| dc.contributor.author | Ruhstaller, Beat | - |
| dc.date.accessioned | 2018-06-15T11:23:48Z | - |
| dc.date.available | 2018-06-15T11:23:48Z | - |
| dc.date.issued | 2010-07 | - |
| dc.identifier.issn | 0021-8979 | de_CH |
| dc.identifier.issn | 1089-7550 | de_CH |
| dc.identifier.uri | https://digitalcollection.zhaw.ch/handle/11475/6923 | - |
| dc.description.abstract | For the design of organic semiconductor devices such as organic light-emitting devices and solar cells, it is of crucial importance to solve the underlying charge transport equations efficiently and accurately. Only a fast and robust solver allows the use of fitting algorithms for parameter extraction and variation. Introducing appropriate models for organic semiconductors that account for the disordered nature of hopping transport leads to increasingly nonlinear and more strongly coupled equations. The solution procedures we present in this study offer a versatile, robust, and efficient means of simulating organic semiconductor devices. They allow for the direct solution of the steady-state drift-diffusion problem. We demonstrate that the numerical methods perform well in combination with advanced physical transport models such as energetic Gaussian disorder, density-dependent and field-dependent mobilities, the generalized Einstein diffusion, traps, and its consistent charge injection model. | de_CH |
| dc.language.iso | en | de_CH |
| dc.publisher | American Institute of Physics | de_CH |
| dc.relation.ispartof | Journal of Applied Physics | de_CH |
| dc.rights | Licence according to publishing contract | de_CH |
| dc.subject.ddc | 530: Physik | de_CH |
| dc.title | Numerical simulation of charge transport in disordered organic semiconductor devices | de_CH |
| dc.type | Beitrag in wissenschaftlicher Zeitschrift | de_CH |
| dcterms.type | Text | de_CH |
| zhaw.departement | School of Engineering | de_CH |
| dc.identifier.doi | 10.21256/zhaw-1989 | - |
| dc.identifier.doi | 10.1063/1.3475505 | de_CH |
| zhaw.funding.eu | info:eu-repo/grantAgreement/EC/FP7/213708//Advanced experimentally validated integrated OLED model for a breakthrough in high-performance OLED technology/AEVIOM | de_CH |
| zhaw.issue | 5 | de_CH |
| zhaw.originated.zhaw | Yes | de_CH |
| zhaw.pages.end | 054504-8 | de_CH |
| zhaw.pages.start | 054504-1 | de_CH |
| zhaw.publication.status | publishedVersion | de_CH |
| zhaw.volume | 108 | de_CH |
| zhaw.publication.review | Peer review (Publikation) | de_CH |
| Appears in collections: | Publikationen School of Engineering | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 2010_Knapp_Numerical_simulation_of_charge_transport.pdf | 222.12 kB | Adobe PDF |  View/Open |
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Knapp, E., Häusermann, R., Schwarzenbach, H., & Ruhstaller, B. (2010). Numerical simulation of charge transport in disordered organic semiconductor devices. Journal of Applied Physics, 108(5), 054504–054501. https://doi.org/10.21256/zhaw-1989
Knapp, E. et al. (2010) ‘Numerical simulation of charge transport in disordered organic semiconductor devices’, Journal of Applied Physics, 108(5), pp. 054504–1–054504–8. Available at: https://doi.org/10.21256/zhaw-1989.
E. Knapp, R. Häusermann, H. Schwarzenbach, and B. Ruhstaller, “Numerical simulation of charge transport in disordered organic semiconductor devices,” Journal of Applied Physics, vol. 108, no. 5, pp. 054504–1–054504–8, Jul. 2010, doi: 10.21256/zhaw-1989.
KNAPP, Evelyne, Roger HÄUSERMANN, Hansueli SCHWARZENBACH und Beat RUHSTALLER, 2010. Numerical simulation of charge transport in disordered organic semiconductor devices. Journal of Applied Physics. Juli 2010. Bd. 108, Nr. 5, S. 054504–1–054504–8. DOI 10.21256/zhaw-1989
Knapp, Evelyne, Roger Häusermann, Hansueli Schwarzenbach, and Beat Ruhstaller. 2010. “Numerical Simulation of Charge Transport in Disordered Organic Semiconductor Devices.” Journal of Applied Physics 108 (5): 054504–1. https://doi.org/10.21256/zhaw-1989.
Knapp, Evelyne, et al. “Numerical Simulation of Charge Transport in Disordered Organic Semiconductor Devices.” Journal of Applied Physics, vol. 108, no. 5, July 2010, pp. 054504–1, https://doi.org/10.21256/zhaw-1989.
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