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Please use this identifier to cite or link to this item: https://doi.org/10.21256/zhaw-29018
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dc.contributor.authorGorshkov, Vyacheslav N.-
dc.contributor.authorStretovych, Mykola O.-
dc.contributor.authorSemeniuk, Valerii F.-
dc.contributor.authorKruglenko, Mikhail P.-
dc.contributor.authorSemeniuk, Nadiia I.-
dc.contributor.authorStyopkin, Victor I.-
dc.contributor.authorGabovich, Alexander M.-
dc.contributor.authorBoiger, Gernot K.-
dc.date.accessioned2023-11-01T16:47:30Z-
dc.date.available2023-11-01T16:47:30Z-
dc.date.issued2023-10-06-
dc.identifier.issn2079-4991de_CH
dc.identifier.urihttps://digitalcollection.zhaw.ch/handle/11475/29018-
dc.description.abstractIon-flow-stimulated roughening transition is a phenomenon that may prove useful in the hierarchical structuring of nanostructures. In this work, we have investigated theoretically and experimentally the surface texturing of single-crystal and multi-crystalline silicon wafers irradiated using ion-beam flows. In contrast to previous studies, ions had relatively low energies, whereas flow densities were high enough to induce a quasi-liquid state in the upper silicon layers. The resulting surface modifications reduced the wafer light reflectance to values characteristic of black silicon, widely used in solar energetics. Features of nanostructures on different faces of silicon single crystals were studied numerically based on the mesoscopic Monte Carlo model. We established that the formation of nano-pyramids, ridges, and twisting dune-like structures is due to the stimulated roughening transition effect. The aforementioned variety of modified surface morphologies arises due to the fact that the effects of stimulated surface diffusion of atoms and re-deposition of free atoms on the wafer surface from the near-surface region are manifested to different degrees on different Si faces. It is these two factors that determine the selection of the allowable "trajectories" (evolution paths) of the thermodynamic system along which its Helmholtz free energy, F, decreases, concomitant with an increase in the surface area of the wafer and the corresponding changes in its internal energy, U (dU>0), and entropy, S (dS>0), so that dF=dU - TdS<0, where T is the absolute temperature. The basic theoretical concepts developed were confirmed in experimental studies, the results of which showed that our method could produce, abundantly, black silicon wafers in an environmentally friendly manner compared to traditional chemical etching.de_CH
dc.language.isoende_CH
dc.publisherMDPIde_CH
dc.relation.ispartofNanomaterialsde_CH
dc.rightshttp://creativecommons.org/licenses/by/4.0/de_CH
dc.subjectMonte Carlo methodde_CH
dc.subjectBlack siliconde_CH
dc.subjectHelicon dischargede_CH
dc.subjectIon plasma flowde_CH
dc.subjectSilicon wafer processingde_CH
dc.subjectSurface mass transferde_CH
dc.subject.ddc621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnikde_CH
dc.titleHierarchical structuring of black silicon wafers by ion-flow-stimulated roughening transition : fundamentals and applications for photovoltaicsde_CH
dc.typeBeitrag in wissenschaftlicher Zeitschriftde_CH
dcterms.typeTextde_CH
zhaw.departementSchool of Engineeringde_CH
zhaw.organisationalunitInstitute of Computational Physics (ICP)de_CH
dc.identifier.doi10.3390/nano13192715de_CH
dc.identifier.doi10.21256/zhaw-29018-
dc.identifier.pmid37836356de_CH
zhaw.funding.euNode_CH
zhaw.issue19de_CH
zhaw.originated.zhawYesde_CH
zhaw.pages.start2715de_CH
zhaw.publication.statuspublishedVersionde_CH
zhaw.volume13de_CH
zhaw.publication.reviewPeer review (Publikation)de_CH
zhaw.webfeedMultiphysics Modelingde_CH
zhaw.funding.zhawGeoCloud – Simulation Software for Cloud-based Digital Microstructure Design of New Fuel Cell Materialsde_CH
zhaw.author.additionalNode_CH
zhaw.display.portraitYesde_CH
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Gorshkov, V. N., Stretovych, M. O., Semeniuk, V. F., Kruglenko, M. P., Semeniuk, N. I., Styopkin, V. I., Gabovich, A. M., & Boiger, G. K. (2023). Hierarchical structuring of black silicon wafers by ion-flow-stimulated roughening transition : fundamentals and applications for photovoltaics. Nanomaterials, 13(19), 2715. https://doi.org/10.3390/nano13192715
Gorshkov, V.N. et al. (2023) ‘Hierarchical structuring of black silicon wafers by ion-flow-stimulated roughening transition : fundamentals and applications for photovoltaics’, Nanomaterials, 13(19), p. 2715. Available at: https://doi.org/10.3390/nano13192715.
V. N. Gorshkov et al., “Hierarchical structuring of black silicon wafers by ion-flow-stimulated roughening transition : fundamentals and applications for photovoltaics,” Nanomaterials, vol. 13, no. 19, p. 2715, Oct. 2023, doi: 10.3390/nano13192715.
GORSHKOV, Vyacheslav N., Mykola O. STRETOVYCH, Valerii F. SEMENIUK, Mikhail P. KRUGLENKO, Nadiia I. SEMENIUK, Victor I. STYOPKIN, Alexander M. GABOVICH und Gernot K. BOIGER, 2023. Hierarchical structuring of black silicon wafers by ion-flow-stimulated roughening transition : fundamentals and applications for photovoltaics. Nanomaterials. 6 Oktober 2023. Bd. 13, Nr. 19, S. 2715. DOI 10.3390/nano13192715
Gorshkov, Vyacheslav N., Mykola O. Stretovych, Valerii F. Semeniuk, Mikhail P. Kruglenko, Nadiia I. Semeniuk, Victor I. Styopkin, Alexander M. Gabovich, and Gernot K. Boiger. 2023. “Hierarchical Structuring of Black Silicon Wafers by Ion-Flow-Stimulated Roughening Transition : Fundamentals and Applications for Photovoltaics.” Nanomaterials 13 (19): 2715. https://doi.org/10.3390/nano13192715.
Gorshkov, Vyacheslav N., et al. “Hierarchical Structuring of Black Silicon Wafers by Ion-Flow-Stimulated Roughening Transition : Fundamentals and Applications for Photovoltaics.” Nanomaterials, vol. 13, no. 19, Oct. 2023, p. 2715, https://doi.org/10.3390/nano13192715.


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