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dc.contributor.authorSchumacher, Jürgen-
dc.contributor.authorAltermatt, Pietro-
dc.contributor.authorHeiser, Gernot-
dc.contributor.authorAberle, Armin-
dc.date.accessioned2018-10-11T14:37:28Z-
dc.date.available2018-10-11T14:37:28Z-
dc.date.issued1999-
dc.identifier.urihttps://digitalcollection.zhaw.ch/handle/11475/11711-
dc.language.isoende_CH
dc.rightsLicence according to publishing contractde_CH
dc.subject.ddc621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnikde_CH
dc.titleApplication of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emittersde_CH
dc.typeKonferenz: Paperde_CH
dcterms.typeTextde_CH
zhaw.departementSchool of Engineeringde_CH
zhaw.organisationalunitInstitute of Computational Physics (ICP)de_CH
zhaw.publisher.placeSapporode_CH
zhaw.conference.details11th International PV Science and Engineering Conference, Sapporo, Japan, 20-24 September 1999de_CH
zhaw.funding.euNode_CH
zhaw.originated.zhawNode_CH
zhaw.pages.end292de_CH
zhaw.pages.start291de_CH
zhaw.publication.statuspublishedVersionde_CH
zhaw.publication.reviewEditorial reviewde_CH
zhaw.title.proceedingsTechnical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporode_CH
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Schumacher, J., Altermatt, P., Heiser, G., & Aberle, A. (1999). Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters [Conference paper]. Technical Digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 291–292.
Schumacher, J. et al. (1999) ‘Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters’, in Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo. Sapporo, pp. 291–292.
J. Schumacher, P. Altermatt, G. Heiser, and A. Aberle, “Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters,” in Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 1999, pp. 291–292.
SCHUMACHER, Jürgen, Pietro ALTERMATT, Gernot HEISER und Armin ABERLE, 1999. Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters. In: Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo. Conference paper. Sapporo. 1999. S. 291–292
Schumacher, Jürgen, Pietro Altermatt, Gernot Heiser, and Armin Aberle. 1999. “Application of an Improved Band Gap Narrowing Model to the Numerical Simulation of Recombination Properties of Phosphorus Doped Silicon Emitters.” Conference paper. In Technical Digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 291–92. Sapporo.
Schumacher, Jürgen, et al. “Application of an Improved Band Gap Narrowing Model to the Numerical Simulation of Recombination Properties of Phosphorus Doped Silicon Emitters.” Technical Digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 1999, pp. 291–92.


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