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https://doi.org/10.21256/zhaw-15666| Publikationstyp: | Beitrag in wissenschaftlicher Zeitschrift |
| Art der Begutachtung: | Peer review (Publikation) |
| Titel: | Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices |
| Autor/-in: | Altazin, Stéphane Kirsch, Christoph Knapp, Evelyne Stous, Alexandre Ruhstaller, Beat |
| DOI: | 10.1063/1.5043245 10.21256/zhaw-15666 |
| Erschienen in: | Journal of Applied Physics |
| Band(Heft): | 124 |
| Heft: | 13 |
| Seite(n): | 135501 |
| Erscheinungsdatum: | 2018 |
| Verlag / Hrsg. Institution: | American Institute of Physics |
| ISSN: | 0021-8979 1089-7550 |
| Sprache: | Deutsch |
| Fachgebiet (DDC): | 530: Physik |
| Zusammenfassung: | We present a new approach to simulate the transport of charges across organic/organic layer interfaces in organic semiconductor devices. This approach combines the drift-diffusion formalism away from the interface with a hopping description of the charge transport in the vicinity of the interface. It has been implemented in the commercial software SETFOS allowing for fast simulations of the complete device. This new model takes into account both recombination and generation mechanisms across the interface enabling the modeling of charge-generation/recombination interfaces for the numerical simulation of tandem devices. Using this approach, it is also possible to simulate devices using 1,4,5,8,9,11-Hexaazatriphenylenehexacarbonitrile as a hole-injection layer. This particular material has a very deep HOMO level (approximately 9.5 eV), which would seemingly prevent such a layer to be used as a hole-injection material in the framework of traditional drift-diffusion models. |
| URI: | https://digitalcollection.zhaw.ch/handle/11475/15666 |
| Volltext Version: | Publizierte Version |
| Lizenz (gemäss Verlagsvertrag): | CC BY 4.0: Namensnennung 4.0 International |
| Departement: | School of Engineering |
| Organisationseinheit: | Institute of Computational Physics (ICP) |
| Enthalten in den Sammlungen: | Publikationen School of Engineering |
Dateien zu dieser Ressource:
| Datei | Beschreibung | Größe | Format | |
|---|---|---|---|---|
| 2018_Altazin-etal_Drift-diffusion-model-charge-transport.pdf | 1.46 MB | Adobe PDF |  Öffnen/Anzeigen |
Zur Langanzeige
Altazin, S., Kirsch, C., Knapp, E., Stous, A., & Ruhstaller, B. (2018). Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices. Journal of Applied Physics, 124(13), 135501. https://doi.org/10.1063/1.5043245
Altazin, S. et al. (2018) ‘Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices’, Journal of Applied Physics, 124(13), p. 135501. Available at: https://doi.org/10.1063/1.5043245.
S. Altazin, C. Kirsch, E. Knapp, A. Stous, and B. Ruhstaller, “Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices,” Journal of Applied Physics, vol. 124, no. 13, p. 135501, 2018, doi: 10.1063/1.5043245.
ALTAZIN, Stéphane, Christoph KIRSCH, Evelyne KNAPP, Alexandre STOUS und Beat RUHSTALLER, 2018. Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices. Journal of Applied Physics. 2018. Bd. 124, Nr. 13, S. 135501. DOI 10.1063/1.5043245
Altazin, Stéphane, Christoph Kirsch, Evelyne Knapp, Alexandre Stous, and Beat Ruhstaller. 2018. “Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices.” Journal of Applied Physics 124 (13): 135501. https://doi.org/10.1063/1.5043245.
Altazin, Stéphane, et al. “Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices.” Journal of Applied Physics, vol. 124, no. 13, 2018, p. 135501, https://doi.org/10.1063/1.5043245.
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