Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices

Altazin, Stéphane; Kirsch, Christoph; Knapp, Evelyne; Stous, Alexandre; Ruhstaller, Beat

doi:10.1063/1.5043245

Please use this identifier to cite or link to this item: https://doi.org/10.21256/zhaw-15666

Publication type:	Article in scientific journal
Type of review:	Peer review (publication)
Title:	Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices
Authors:	Altazin, Stéphane Kirsch, Christoph Knapp, Evelyne Stous, Alexandre Ruhstaller, Beat
DOI:	10.1063/1.5043245 10.21256/zhaw-15666
Published in:	Journal of Applied Physics
Volume(Issue):	124
Issue:	13
Page(s):	135501
Issue Date:	2018
Publisher / Ed. Institution:	American Institute of Physics
ISSN:	0021-8979 1089-7550
Language:	German
Subject (DDC):	530: Physics
Abstract:	We present a new approach to simulate the transport of charges across organic/organic layer interfaces in organic semiconductor devices. This approach combines the drift-diffusion formalism away from the interface with a hopping description of the charge transport in the vicinity of the interface. It has been implemented in the commercial software SETFOS allowing for fast simulations of the complete device. This new model takes into account both recombination and generation mechanisms across the interface enabling the modeling of charge-generation/recombination interfaces for the numerical simulation of tandem devices. Using this approach, it is also possible to simulate devices using 1,4,5,8,9,11-Hexaazatriphenylenehexacarbonitrile as a hole-injection layer. This particular material has a very deep HOMO level (approximately 9.5 eV), which would seemingly prevent such a layer to be used as a hole-injection material in the framework of traditional drift-diffusion models.
URI:	https://digitalcollection.zhaw.ch/handle/11475/15666
Fulltext version:	Published version
License (according to publishing contract):	CC BY 4.0: Attribution 4.0 International
Departement:	School of Engineering
Organisational Unit:	Institute of Computational Physics (ICP)
Appears in collections:	Publikationen School of Engineering

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Altazin, S., Kirsch, C., Knapp, E., Stous, A., & Ruhstaller, B. (2018). Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices. Journal of Applied Physics, 124(13), 135501. https://doi.org/10.1063/1.5043245

Altazin, S. et al. (2018) ‘Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices’, Journal of Applied Physics, 124(13), p. 135501. Available at: https://doi.org/10.1063/1.5043245.

S. Altazin, C. Kirsch, E. Knapp, A. Stous, and B. Ruhstaller, “Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices,” Journal of Applied Physics, vol. 124, no. 13, p. 135501, 2018, doi: 10.1063/1.5043245.

ALTAZIN, Stéphane, Christoph KIRSCH, Evelyne KNAPP, Alexandre STOUS und Beat RUHSTALLER, 2018. Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices. Journal of Applied Physics. 2018. Bd. 124, Nr. 13, S. 135501. DOI 10.1063/1.5043245

Altazin, Stéphane, Christoph Kirsch, Evelyne Knapp, Alexandre Stous, and Beat Ruhstaller. 2018. “Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices.” Journal of Applied Physics 124 (13): 135501. https://doi.org/10.1063/1.5043245.

Altazin, Stéphane, et al. “Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices.” Journal of Applied Physics, vol. 124, no. 13, 2018, p. 135501, https://doi.org/10.1063/1.5043245.