Title: Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices
Authors : Altazin, S.
Kirsch, Christoph
Knapp, Evelyne
Stous, A.
Ruhstaller, Beat
Published in : Journal of Applied Physics
Volume(Issue) : 124
Publisher / Ed. Institution : American Institute of Physics
Issue Date: 2018
License (according to publishing contract) : Licence according to publishing contract
Type of review: Peer review (publication)
Language : German
Subject (DDC) : 530: Physics
Abstract: We present a new approach to simulate the transport of charges across organic/organic layer interfaces in organic semiconductor devices. This approach combines the drift-diffusion formalism away from the interface with a hopping description of the charge transport in the vicinity of the interface. It has been implemented in the commercial software SETFOS allowing for fast simulations of the complete device. This new model takes into account both recombination and generation mechanisms across the interface enabling the modeling of charge-generation/recombination interfaces for the numerical simulation of tandem devices. Using this approach, it is also possible to simulate devices using 1,4,5,8,9,11-Hexaazatriphenylenehexacarbonitrile as a hole-injection layer. This particular material has a very deep HOMO level (approximately 9.5‚ÄČeV), which would seemingly prevent such a layer to be used as a hole-injection material in the framework of traditional drift-diffusion models.
Departement: School of Engineering
Organisational Unit: Institute of Computational Physics (ICP)
Publication type: Article in scientific journal
DOI : 10.1063/1.5043245
ISSN: 0021-8979
URI: https://digitalcollection.zhaw.ch/handle/11475/15666
Appears in Collections:Publikationen School of Engineering

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