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https://doi.org/10.21256/zhaw-7040| Publication type: | Article in scientific journal |
| Type of review: | Peer review (publication) |
| Title: | Numerical analysis of steady-state and transient charge transport in organic semiconductor devices |
| Authors: | Knapp, Evelyne Ruhstaller, Beat |
| DOI: | 10.1007/s11082-011-9443-1 10.21256/zhaw-7040 |
| Published in: | Optical and Quantum Electronics |
| Volume(Issue): | 42 |
| Issue: | 11–13 |
| Page(s): | 667 |
| Pages to: | 677 |
| Issue Date: | 11-Oct-2011 |
| Publisher / Ed. Institution: | Kluwer |
| ISSN: | 0306-8919 |
| Language: | English |
| Subject (DDC): | 530: Physics 621.3: Electrical, communications, control engineering |
| Abstract: | A one-dimensional numerical model for the simulation of organic semiconductor devices such as organic light-emitting devices and solar cells is presented. The model accounts for the energetic disorder in organic semiconductors and assumes that charge transport takes place by a hopping process between uncorrelated sites. Therefore a Gaussian density of states and the use of the Fermi-Dirac statistics are introduced. The model includes density-, field- and temperature-dependent mobilities as well as the generalized Einstein relation. The numerical methods to solve the underlying drift-diffusion problem perform well in combination with the novel physical model ingredients. We demonstrate efficient numerical techniques that we employ to simulate common experimental characterization techniques such as current-voltage, dark-injection transient and electrical impedance measurements. This is crucial for physical model validation and for material parameter extraction. We also highlight how the numerical solution of the novel model differs from the analytical solution of the simplified drift-only model. |
| URI: | https://digitalcollection.zhaw.ch/handle/11475/7040 |
| Fulltext version: | Published version |
| License (according to publishing contract): | Licence according to publishing contract |
| Departement: | School of Engineering |
| Organisational Unit: | Institute of Computational Physics (ICP) |
| Appears in collections: | Publikationen School of Engineering |
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| Knapp-Ruhstaller2011_Article_NumericalAnalysisOfSteady-stat.pdf | 528.28 kB | Adobe PDF |  View/Open |
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Knapp, E., & Ruhstaller, B. (2011). Numerical analysis of steady-state and transient charge transport in organic semiconductor devices. Optical and Quantum Electronics, 42(11–13), 667–677. https://doi.org/10.1007/s11082-011-9443-1
Knapp, E. and Ruhstaller, B. (2011) ‘Numerical analysis of steady-state and transient charge transport in organic semiconductor devices’, Optical and Quantum Electronics, 42(11–13), pp. 667–677. Available at: https://doi.org/10.1007/s11082-011-9443-1.
E. Knapp and B. Ruhstaller, “Numerical analysis of steady-state and transient charge transport in organic semiconductor devices,” Optical and Quantum Electronics, vol. 42, no. 11–13, pp. 667–677, Oct. 2011, doi: 10.1007/s11082-011-9443-1.
KNAPP, Evelyne und Beat RUHSTALLER, 2011. Numerical analysis of steady-state and transient charge transport in organic semiconductor devices. Optical and Quantum Electronics. 11 Oktober 2011. Bd. 42, Nr. 11–13, S. 667–677. DOI 10.1007/s11082-011-9443-1
Knapp, Evelyne, and Beat Ruhstaller. 2011. “Numerical Analysis of Steady-State and Transient Charge Transport in Organic Semiconductor Devices.” Optical and Quantum Electronics 42 (11–13): 667–77. https://doi.org/10.1007/s11082-011-9443-1.
Knapp, Evelyne, and Beat Ruhstaller. “Numerical Analysis of Steady-State and Transient Charge Transport in Organic Semiconductor Devices.” Optical and Quantum Electronics, vol. 42, no. 11–13, Oct. 2011, pp. 667–77, https://doi.org/10.1007/s11082-011-9443-1.
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