Please use this identifier to cite or link to this item: https://doi.org/10.21256/zhaw-1989
Title: Numerical simulation of charge transport in disordered organic semiconductor devices
Authors : Knapp, Evelyne
Häusermann, Roger
Schwarzenbach, Hansueli
Ruhstaller, Beat
Published in : Journal of Applied Physics
Volume(Issue) : 108
Issue : 5
Pages : 054504-1
Pages to: 054504-8
Publisher / Ed. Institution : AIP Publishing
Issue Date: Jul-2010
License (according to publishing contract) : Licence according to publishing contract
Type of review: Peer review (Publication)
Language : English
Subject (DDC) : 530: Physics
Abstract: For the design of organic semiconductor devices such as organic light-emitting devices and solar cells, it is of crucial importance to solve the underlying charge transport equations efficiently and accurately. Only a fast and robust solver allows the use of fitting algorithms for parameter extraction and variation. Introducing appropriate models for organic semiconductors that account for the disordered nature of hopping transport leads to increasingly nonlinear and more strongly coupled equations. The solution procedures we present in this study offer a versatile, robust, and efficient means of simulating organic semiconductor devices. They allow for the direct solution of the steady-state drift-diffusion problem. We demonstrate that the numerical methods perform well in combination with advanced physical transport models such as energetic Gaussian disorder, density-dependent and field-dependent mobilities, the generalized Einstein diffusion, traps, and its consistent charge injection model. 
Departement: School of Engineering
Publication type: Article in scientific Journal
DOI : 10.1063/1.3475505
10.21256/zhaw-1989
ISSN: 0021-8979
URI: https://digitalcollection.zhaw.ch/handle/11475/6923
Appears in Collections:Publikationen School of Engineering

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