| Publikationstyp: | Beitrag in wissenschaftlicher Zeitschrift |
| Art der Begutachtung: | Peer review (Publikation) |
| Titel: | Doping dependence of the electronic Raman spectra in cuprates |
| Autor/-in: | Venturini, Francesca Opel, M. Hackl, R. Berger, H. Forró, L. Revaz, B. |
| DOI: | 10.1016/S0022-3697(02)00239-1 |
| Erschienen in: | Journal of Physics and Chemistry of Solids |
| Band(Heft): | 63 |
| Heft: | 12 |
| Seite(n): | 2345 |
| Seiten bis: | 2348 |
| Erscheinungsdatum: | Dez-2002 |
| Verlag / Hrsg. Institution: | Elsevier |
| ISSN: | 0022-3697 |
| Sprache: | Englisch |
| Fachgebiet (DDC): | 530: Physik |
| Zusammenfassung: | We report electronic Raman scattering measurements on Bi2Sr2(Y1−xCax)Cu2O8+δ single crystals at different doping levels. The dependence of the spectra on doping and on incoming photon energy is analyzed for different polarization geometries, in the superconducting and in the normal state. We find the scaling behavior of the superconductivity pair-breaking peak with the carrier concentration to be very different in B1g and B2g geometries. Also, we do not find evidence of any significant variation in the lineshape of the spectra in the overdoped region in both symmetries, while we observe a reduction of the intensity in B2g upon decreasing photon energies. The normal state data are analyzed in terms of the memory-function approach. The quasiparticle relaxation rates in the two symmetries display a dependence on energy and temperature which varies with the doping level. |
| URI: | https://digitalcollection.zhaw.ch/handle/11475/6480 |
| Volltext Version: | Publizierte Version |
| Lizenz (gemäss Verlagsvertrag): | Lizenz gemäss Verlagsvertrag |
| Departement: | School of Engineering |
| Organisationseinheit: | Institut für Angewandte Mathematik und Physik (IAMP) |
| Enthalten in den Sammlungen: | Publikationen School of Engineering |
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Venturini, F., Opel, M., Hackl, R., Berger, H., Forró, L., & Revaz, B. (2002). Doping dependence of the electronic Raman spectra in cuprates. Journal of Physics and Chemistry of Solids, 63(12), 2345–2348. https://doi.org/10.1016/S0022-3697(02)00239-1
Venturini, F. et al. (2002) ‘Doping dependence of the electronic Raman spectra in cuprates’, Journal of Physics and Chemistry of Solids, 63(12), pp. 2345–2348. Available at: https://doi.org/10.1016/S0022-3697(02)00239-1.
F. Venturini, M. Opel, R. Hackl, H. Berger, L. Forró, and B. Revaz, “Doping dependence of the electronic Raman spectra in cuprates,” Journal of Physics and Chemistry of Solids, vol. 63, no. 12, pp. 2345–2348, Dec. 2002, doi: 10.1016/S0022-3697(02)00239-1.
VENTURINI, Francesca, M. OPEL, R. HACKL, H. BERGER, L. FORRÓ und B. REVAZ, 2002. Doping dependence of the electronic Raman spectra in cuprates. Journal of Physics and Chemistry of Solids. Dezember 2002. Bd. 63, Nr. 12, S. 2345–2348. DOI 10.1016/S0022-3697(02)00239-1
Venturini, Francesca, M. Opel, R. Hackl, H. Berger, L. Forró, and B. Revaz. 2002. “Doping Dependence of the Electronic Raman Spectra in Cuprates.” Journal of Physics and Chemistry of Solids 63 (12): 2345–48. https://doi.org/10.1016/S0022-3697(02)00239-1.
Venturini, Francesca, et al. “Doping Dependence of the Electronic Raman Spectra in Cuprates.” Journal of Physics and Chemistry of Solids, vol. 63, no. 12, Dec. 2002, pp. 2345–48, https://doi.org/10.1016/S0022-3697(02)00239-1.
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