Title: Doping dependence of the electronic Raman spectra in cuprates
Authors : Venturini, Francesca
Opel, M.
Hackl, R.
Berger, H.
Forró, L.
Revaz, B.
Published in : Journal of Physics and Chemistry of Solids
Volume(Issue) : 63
Issue : 12
Pages : 2345
Pages to: 2348
Publisher / Ed. Institution : Elsevier
Issue Date: Dec-2002
License (according to publishing contract) : Licence according to publishing contract
Type of review: Peer review (Publication)
Language : English
Subject (DDC) : 530: Physics
Abstract: We report electronic Raman scattering measurements on Bi2Sr2(Y1−xCax)Cu2O8+δ single crystals at different doping levels. The dependence of the spectra on doping and on incoming photon energy is analyzed for different polarization geometries, in the superconducting and in the normal state. We find the scaling behavior of the superconductivity pair-breaking peak with the carrier concentration to be very different in B1g and B2g geometries. Also, we do not find evidence of any significant variation in the lineshape of the spectra in the overdoped region in both symmetries, while we observe a reduction of the intensity in B2g upon decreasing photon energies. The normal state data are analyzed in terms of the memory-function approach. The quasiparticle relaxation rates in the two symmetries display a dependence on energy and temperature which varies with the doping level.
Departement: School of Engineering
Organisational Unit: Institute of Applied Mathematics and Physics (IAMP)
Publication type: Article in scientific Journal
DOI : 10.1016/S0022-3697(02)00239-1
ISSN: 0022-3697
URI: https://digitalcollection.zhaw.ch/handle/11475/6480
Appears in Collections:Publikationen School of Engineering

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