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dc.contributor.authorVenturini, Francesca-
dc.date.accessioned2018-05-29T13:49:24Z-
dc.date.available2018-05-29T13:49:24Z-
dc.date.issued2003-
dc.identifier.isbn978-3-540-40150-6de_CH
dc.identifier.isbn978-3-540-44838-9de_CH
dc.identifier.urihttps://digitalcollection.zhaw.ch/handle/11475/6207-
dc.description.abstractTransport properties play a major role in the characterization of correlated metals such as the cuprates. The usual dc and optical conductivity measurements, however, suffer from the missing momentum resolution in the strongly anisotropic CuO2 plane. The problem can be partially solved by using electronic Raman scattering. Here, the response is proportional to the conductivity. Additionally, different parts of the Fermi surface can be projected out by using polarized light. With this technique we study the electron dynamics in the normal state of cuprates over a wide range of doping. The strong anisotropy of the electron relaxation which evolves below a doping level of 0.22 holes/CuO2 is interpreted in terms of an unconventional metal-insulator-transition with an anisotropic gap. A phenomenology is developed which allows a quantitative understanding of the Raman results and provides a scenario which links single- and many-particle properties.de_CH
dc.language.isoende_CH
dc.publisherSpringerde_CH
dc.relation.ispartofAdvances in solid state physicsde_CH
dc.relation.ispartofseriesAdvances in Solid State Physicsde_CH
dc.rightsLicence according to publishing contractde_CH
dc.subjectSuperconductorde_CH
dc.subjectRaman spectroscopyde_CH
dc.subjectCupratesde_CH
dc.subjectQuantum phase transitionde_CH
dc.subject.ddc530: Physikde_CH
dc.titleEvidence for a metal-insulator transition in overdoped Cuprates : new Raman resultsde_CH
dc.typeBuchbeitragde_CH
dcterms.typeTextde_CH
zhaw.departementSchool of Engineeringde_CH
zhaw.organisationalunitInstitut für Angewandte Mathematik und Physik (IAMP)de_CH
dc.identifier.doi10.1007/978-3-540-44838-9_18de_CH
zhaw.funding.euNode_CH
zhaw.originated.zhawNode_CH
zhaw.pages.end266de_CH
zhaw.pages.start253de_CH
zhaw.parentwork.editorKramer, Bernhard-
zhaw.publication.statuspublishedVersionde_CH
zhaw.series.number43de_CH
zhaw.publication.reviewEditorial reviewde_CH
zhaw.webfeedPhotonicsde_CH
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Venturini, F. (2003). Evidence for a metal-insulator transition in overdoped Cuprates : new Raman results. In B. Kramer (Ed.), Advances in solid state physics (pp. 253–266). Springer. https://doi.org/10.1007/978-3-540-44838-9_18
Venturini, F. (2003) ‘Evidence for a metal-insulator transition in overdoped Cuprates : new Raman results’, in B. Kramer (ed.) Advances in solid state physics. Springer, pp. 253–266. Available at: https://doi.org/10.1007/978-3-540-44838-9_18.
F. Venturini, “Evidence for a metal-insulator transition in overdoped Cuprates : new Raman results,” in Advances in solid state physics, B. Kramer, Ed. Springer, 2003, pp. 253–266. doi: 10.1007/978-3-540-44838-9_18.
VENTURINI, Francesca, 2003. Evidence for a metal-insulator transition in overdoped Cuprates : new Raman results. In: Bernhard KRAMER (Hrsg.), Advances in solid state physics. Springer. S. 253–266. ISBN 978-3-540-40150-6
Venturini, Francesca. 2003. “Evidence for a Metal-Insulator Transition in Overdoped Cuprates : New Raman Results.” In Advances in Solid State Physics, edited by Bernhard Kramer, 253–66. Springer. https://doi.org/10.1007/978-3-540-44838-9_18.
Venturini, Francesca. “Evidence for a Metal-Insulator Transition in Overdoped Cuprates : New Raman Results.” Advances in Solid State Physics, edited by Bernhard Kramer, Springer, 2003, pp. 253–66, https://doi.org/10.1007/978-3-540-44838-9_18.


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