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dc.contributor.authorPenninck, Lieven-
dc.contributor.authorDiethelm, Matthias-
dc.contributor.authorAltazin, Stéphane-
dc.contributor.authorHiestand, Roman-
dc.contributor.authorKirsch, Christoph-
dc.contributor.authorRuhstaller, Beat-
dc.date.accessioned2019-03-04T16:48:31Z-
dc.date.available2019-03-04T16:48:31Z-
dc.date.issued2018-
dc.identifier.issn1071-0922de_CH
dc.identifier.issn1938-3657de_CH
dc.identifier.urihttps://digitalcollection.zhaw.ch/handle/11475/15781-
dc.description.abstractHigh pixel density displays are demanded for active matrix organic light‐emitting diode displays (AMOLED) in applications such as virtual reality headsets, micro‐displays, and high‐end smartphones. Parasitic emission from non‐addressed neighboring pixels (crosstalk) is a common problem in such high pixel density AMOLED, and this crosstalk becomes more severe as the pixel density and fill ratio of the display increases. One of the causes of crosstalk is parasitic currents that travel through common organic semiconductor layers. In this paper, we model and quantify the pixel crosstalk using a 2 + 1D finite element model that is based on the conductivity of the common layer and the luminance-current-voltage curves of the subpixels as measured input parameters. We assess the effect of crosstalk on the pixel current, observed color, and luminance. The 2 + 1D model limits the number of degrees of freedom so that calculations on a standard personal computer are feasible.de_CH
dc.language.isoende_CH
dc.publisherWileyde_CH
dc.relation.ispartofJournal of the Society for Information Displayde_CH
dc.rightsLicence according to publishing contractde_CH
dc.subjectOLEDde_CH
dc.subjectCrosstalkde_CH
dc.subject.ddc621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnikde_CH
dc.titleModelling crosstalk through common semiconductor layers in AMOLED displaysde_CH
dc.typeBeitrag in wissenschaftlicher Zeitschriftde_CH
dcterms.typeTextde_CH
zhaw.departementSchool of Engineeringde_CH
zhaw.organisationalunitInstitute of Computational Physics (ICP)de_CH
dc.identifier.doi10.1002/jsid.671de_CH
zhaw.funding.euNode_CH
zhaw.issue9de_CH
zhaw.originated.zhawYesde_CH
zhaw.pages.end554de_CH
zhaw.pages.start546de_CH
zhaw.publication.statuspublishedVersionde_CH
zhaw.volume26de_CH
zhaw.publication.reviewNot specifiedde_CH
Appears in collections:Publikationen School of Engineering

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Penninck, L., Diethelm, M., Altazin, S., Hiestand, R., Kirsch, C., & Ruhstaller, B. (2018). Modelling crosstalk through common semiconductor layers in AMOLED displays. Journal of the Society for Information Display, 26(9), 546–554. https://doi.org/10.1002/jsid.671
Penninck, L. et al. (2018) ‘Modelling crosstalk through common semiconductor layers in AMOLED displays’, Journal of the Society for Information Display, 26(9), pp. 546–554. Available at: https://doi.org/10.1002/jsid.671.
L. Penninck, M. Diethelm, S. Altazin, R. Hiestand, C. Kirsch, and B. Ruhstaller, “Modelling crosstalk through common semiconductor layers in AMOLED displays,” Journal of the Society for Information Display, vol. 26, no. 9, pp. 546–554, 2018, doi: 10.1002/jsid.671.
PENNINCK, Lieven, Matthias DIETHELM, Stéphane ALTAZIN, Roman HIESTAND, Christoph KIRSCH und Beat RUHSTALLER, 2018. Modelling crosstalk through common semiconductor layers in AMOLED displays. Journal of the Society for Information Display. 2018. Bd. 26, Nr. 9, S. 546–554. DOI 10.1002/jsid.671
Penninck, Lieven, Matthias Diethelm, Stéphane Altazin, Roman Hiestand, Christoph Kirsch, and Beat Ruhstaller. 2018. “Modelling Crosstalk through Common Semiconductor Layers in AMOLED Displays.” Journal of the Society for Information Display 26 (9): 546–54. https://doi.org/10.1002/jsid.671.
Penninck, Lieven, et al. “Modelling Crosstalk through Common Semiconductor Layers in AMOLED Displays.” Journal of the Society for Information Display, vol. 26, no. 9, 2018, pp. 546–54, https://doi.org/10.1002/jsid.671.


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