Publication type: Article in scientific journal
Type of review: Peer review (publication)
Title: Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices
Authors : Altazin, Stéphane
Kirsch, Christoph
Knapp, Evelyne
Stous, Alexandre
Ruhstaller, Beat
DOI : 10.1063/1.5043245
Published in : Journal of Applied Physics
Volume(Issue) : 124
Issue Date: 2018
Publisher / Ed. Institution : American Institute of Physics
ISSN: 0021-8979
Language : German
Subject (DDC) : 530: Physics
Abstract: We present a new approach to simulate the transport of charges across organic/organic layer interfaces in organic semiconductor devices. This approach combines the drift-diffusion formalism away from the interface with a hopping description of the charge transport in the vicinity of the interface. It has been implemented in the commercial software SETFOS allowing for fast simulations of the complete device. This new model takes into account both recombination and generation mechanisms across the interface enabling the modeling of charge-generation/recombination interfaces for the numerical simulation of tandem devices. Using this approach, it is also possible to simulate devices using 1,4,5,8,9,11-Hexaazatriphenylenehexacarbonitrile as a hole-injection layer. This particular material has a very deep HOMO level (approximately 9.5 eV), which would seemingly prevent such a layer to be used as a hole-injection material in the framework of traditional drift-diffusion models.
Fulltext version : Published version
License (according to publishing contract) : Licence according to publishing contract
Departement: School of Engineering
Organisational Unit: Institute of Computational Physics (ICP)
Appears in Collections:Publikationen School of Engineering

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