Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters

Altermatt, Pietro; Schumacher, Jürgen; Cuevas, Andres; Kerr, Mark; Glunz, Stefan; King, Richard; Heiser, Gernot; Schenk, Andreas

doi:10.1063/1.1501743

Publication type:	Article in scientific journal
Type of review:	Peer review (publication)
Title:	Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters
Authors:	Altermatt, Pietro Schumacher, Jürgen Cuevas, Andres Kerr, Mark Glunz, Stefan King, Richard Heiser, Gernot Schenk, Andreas
DOI:	10.1063/1.1501743
Published in:	Journal of Applied Physics
Volume(Issue):	92
Issue:	6
Page(s):	3187
Pages to:	3197
Issue Date:	27-Aug-2002
Publisher / Ed. Institution:	American Institute of Physics
ISSN:	0021-8979 1089-7550
Language:	English
Subject (DDC):	621.3: Electrical, communications, control engineering
Abstract:	We have established a simulation model for phosphorus-doped silicon emitters using Fermi–Dirac statistics. Our model is based on a set of independently measured material parameters and on quantum mechanical calculations. In contrast to commonly applied models, which use Boltzmann statistics and apparent band-gap narrowing data, we use Fermi–Dirac statistics and theoretically derived band shifts, and therefore we account for the degeneracy effects on a physically sounder basis. This leads to unprecedented consistency and precision even at very high dopant densities. We also derive the hole surface recombination velocity parameter Spo by applying our model to a broad range of measurements of the emitter saturation current density. Despite small differences in oxide quality among various laboratories, Spo generally increases for all of them in a very similar manner at high surface doping densities Nsurf. Pyramidal texturing generally increases Spo by a factor of five. The frequently used forming gas anneal lowers Spo mainly in low-doped emitters, while an aluminum anneal (Al deposit followed by a heat cycle) lowers Spo at all Nsurf.
URI:	https://digitalcollection.zhaw.ch/handle/11475/11595
Fulltext version:	Published version
License (according to publishing contract):	Licence according to publishing contract
Departement:	School of Engineering
Appears in collections:	Publikationen School of Engineering

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Altermatt, P., Schumacher, J., Cuevas, A., Kerr, M., Glunz, S., King, R., Heiser, G., & Schenk, A. (2002). Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters. Journal of Applied Physics, 92(6), 3187–3197. https://doi.org/10.1063/1.1501743

Altermatt, P. et al. (2002) ‘Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters’, Journal of Applied Physics, 92(6), pp. 3187–3197. Available at: https://doi.org/10.1063/1.1501743.

P. Altermatt et al., “Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters,” Journal of Applied Physics, vol. 92, no. 6, pp. 3187–3197, Aug. 2002, doi: 10.1063/1.1501743.

ALTERMATT, Pietro, Jürgen SCHUMACHER, Andres CUEVAS, Mark KERR, Stefan GLUNZ, Richard KING, Gernot HEISER und Andreas SCHENK, 2002. Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters. Journal of Applied Physics. 27 August 2002. Bd. 92, Nr. 6, S. 3187–3197. DOI 10.1063/1.1501743

Altermatt, Pietro, Jürgen Schumacher, Andres Cuevas, Mark Kerr, Stefan Glunz, Richard King, Gernot Heiser, and Andreas Schenk. 2002. “Numerical Modeling of Highly Doped Si:P Emitters Based on Fermi–Dirac Statistics and Self-Consistent Material Parameters.” Journal of Applied Physics 92 (6): 3187–97. https://doi.org/10.1063/1.1501743.

Altermatt, Pietro, et al. “Numerical Modeling of Highly Doped Si:P Emitters Based on Fermi–Dirac Statistics and Self-Consistent Material Parameters.” Journal of Applied Physics, vol. 92, no. 6, Aug. 2002, pp. 3187–97, https://doi.org/10.1063/1.1501743.