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dc.contributor.authorVenturini, Francesca-
dc.contributor.authorOpel, M.-
dc.contributor.authorHackl, R.-
dc.contributor.authorBerger, H.-
dc.contributor.authorForró, L.-
dc.contributor.authorRevaz, B.-
dc.date.accessioned2018-06-01T14:03:40Z-
dc.date.available2018-06-01T14:03:40Z-
dc.date.issued2002-12-
dc.identifier.issn0022-3697de_CH
dc.identifier.urihttps://digitalcollection.zhaw.ch/handle/11475/6480-
dc.description.abstractWe report electronic Raman scattering measurements on Bi2Sr2(Y1−xCax)Cu2O8+δ single crystals at different doping levels. The dependence of the spectra on doping and on incoming photon energy is analyzed for different polarization geometries, in the superconducting and in the normal state. We find the scaling behavior of the superconductivity pair-breaking peak with the carrier concentration to be very different in B1g and B2g geometries. Also, we do not find evidence of any significant variation in the lineshape of the spectra in the overdoped region in both symmetries, while we observe a reduction of the intensity in B2g upon decreasing photon energies. The normal state data are analyzed in terms of the memory-function approach. The quasiparticle relaxation rates in the two symmetries display a dependence on energy and temperature which varies with the doping level.de_CH
dc.language.isoende_CH
dc.publisherElsevierde_CH
dc.relation.ispartofJournal of Physics and Chemistry of Solidsde_CH
dc.rightsLicence according to publishing contractde_CH
dc.subject.ddc530: Physikde_CH
dc.titleDoping dependence of the electronic Raman spectra in cupratesde_CH
dc.typeBeitrag in wissenschaftlicher Zeitschriftde_CH
dcterms.typeTextde_CH
zhaw.departementSchool of Engineeringde_CH
zhaw.organisationalunitInstitut für Angewandte Mathematik und Physik (IAMP)de_CH
dc.identifier.doi10.1016/S0022-3697(02)00239-1de_CH
zhaw.funding.euNode_CH
zhaw.issue12de_CH
zhaw.originated.zhawNode_CH
zhaw.pages.end2348de_CH
zhaw.pages.start2345de_CH
zhaw.publication.statuspublishedVersionde_CH
zhaw.volume63de_CH
zhaw.publication.reviewPeer review (Publikation)de_CH
zhaw.webfeedPhotonicsde_CH
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Venturini, F., Opel, M., Hackl, R., Berger, H., Forró, L., & Revaz, B. (2002). Doping dependence of the electronic Raman spectra in cuprates. Journal of Physics and Chemistry of Solids, 63(12), 2345–2348. https://doi.org/10.1016/S0022-3697(02)00239-1
Venturini, F. et al. (2002) ‘Doping dependence of the electronic Raman spectra in cuprates’, Journal of Physics and Chemistry of Solids, 63(12), pp. 2345–2348. Available at: https://doi.org/10.1016/S0022-3697(02)00239-1.
F. Venturini, M. Opel, R. Hackl, H. Berger, L. Forró, and B. Revaz, “Doping dependence of the electronic Raman spectra in cuprates,” Journal of Physics and Chemistry of Solids, vol. 63, no. 12, pp. 2345–2348, Dec. 2002, doi: 10.1016/S0022-3697(02)00239-1.
VENTURINI, Francesca, M. OPEL, R. HACKL, H. BERGER, L. FORRÓ und B. REVAZ, 2002. Doping dependence of the electronic Raman spectra in cuprates. Journal of Physics and Chemistry of Solids. Dezember 2002. Bd. 63, Nr. 12, S. 2345–2348. DOI 10.1016/S0022-3697(02)00239-1
Venturini, Francesca, M. Opel, R. Hackl, H. Berger, L. Forró, and B. Revaz. 2002. “Doping Dependence of the Electronic Raman Spectra in Cuprates.” Journal of Physics and Chemistry of Solids 63 (12): 2345–48. https://doi.org/10.1016/S0022-3697(02)00239-1.
Venturini, Francesca, et al. “Doping Dependence of the Electronic Raman Spectra in Cuprates.” Journal of Physics and Chemistry of Solids, vol. 63, no. 12, Dec. 2002, pp. 2345–48, https://doi.org/10.1016/S0022-3697(02)00239-1.


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